DTC114EUA Features Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS SOT-323 Compliant.See Ordering Information) A Maximum Ratings 25C Unless Otherwise Specified D Parameter Symbol Min Typ Max Unit C 1. IN B 2. GND --- Supply Voltage V --- 50 V 3. OUT CC Input Voltage V -10 --- 40 V F E IN Output Current I --- 50 100 mA H o J G Power Dissipation P --- 200 --- mW K D L Junction Temperature T --- --- 150 J DIMENSIONS INCHES MM T Storage Temperature -55 --- 150 stg DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, 0.045 0.053 1.15 1.35 B <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 Device Marking24 G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 Internal Structure L 0.010 0.018 0.26 0.46 OUT 4VHHFTUFE 4PMEFS 1BE -BZPVU R1 0.70 (mm) IN R2 0.90 GND(+) 1.90 IN OUT GND(+) 0.65 0.65 Rev.3-4-12012020 1/4 MCCSEMI.COMDTC114EUA Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Unit Conditions V 0.5 V =5V, I =100A --- --- V I(off) CC O Input Voltage V =0.3V, I =10mA V --- --- 3.0 V O O I(on) V I =10mA,I =0.5mA Output Voltage --- 0.1 0.3 V O(on) O I I V =5V Input Current --- --- 0.88 mA I I I V =50V, V =0 Output Current --- --- 0.5 A O(off) CC I G V =5V, I =5mA DC Current Gain 30 --- --- I O O R Input Resistance 7.0 10 13 K 1 R /R Resistance Ratio 0.8 1.0 1.2 2 1 f V =10V, I = -5mA, f=100MHz Transition Frequency --- 250 --- MHz T CE E Rev.3-4-12012020 2/4 MCCSEMI.COM