DTC114YUA Features Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS SOT-323 Compliant.See Ordering Information) Maximum Ratings 25C Unless Otherwise Noted A D Parameter Symbol Min Typ Max Unit 1. IN C B V Supply Voltage --- 50 --- V CC 2. GND 3. OUT V Input Voltage -6 --- 40 V IN F E I --- 70 --- mA O H J Output Current G I --- 100 --- mA C(Max) K L P Power Dissipation --- 200 --- mW D DIMENSIONS T Junction Temperature --- --- 150 J INCHES MM DIM NOTE MIN MAX MIN MAX T Storage Temperature -55 --- 150 stg A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, C 0.083 0.096 2.10 2.45 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.026 0.65 D TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 Device Marking64 G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 Internal Structure L 0.010 0.018 0.26 0.46 OUT 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 R1 (mm) IN 0.90 R2 GND(+) 1.90 IN OUT GND(+) 0.65 0.65 Rev.3-4-12012020 1/4 MCCSEMI.COMDTC114YUA Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Unit Conditions V V =5V, I =100A 0.3 --- --- V I(off) CC O Input Voltage V =0.3V, I =1mA V --- --- 1.4 V O O I(on) V I =5mA,I =0.25mA Output Voltage --- 0.1 0.3 V O(on) O I I V =5V Input Current --- --- 0.88 mA I I I V =50V, V =0 Output Current --- --- 0.5 A O(off) CC I G V =5V, I =5mA DC Current Gain 68 --- --- I O O R Input Resistance 7.0 10 13 K 1 R /R Resistance Ratio 3.7 4.7 5.7 2 1 f V =10V, I = -5mA, f=100MHz Transition Frequency --- 250 --- MHz T CE E Rev.3-4-12012020 2/4 MCCSEMI.COM