SI3415 Features Excellent R low gate charge,low gate voltages DS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) P-Channel MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 Thermal Resistance: 357C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain-Source Voltage -20 V DS 3 Gate-Source Voltage V 8 V GS B C I -4.0 A Drain Current-Continuous D 1 2 F E Power Dissipation P 0.35 W D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G H J L K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking: 3415 S G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.020 0.50 0.00 7 0.20 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-12012020 1/4 MCCSEMI.COM 5 ,1 6285&(SI3415 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -20 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =-250A V -0.3 -1.0 GS(th) DS GS D V =-16V, V =0V Zero Gate Voltage Drain Current DS GS I -1 DSS V = 8V, V =0V 10 A GS DS Gate-Body Leakage Current I GSS V = 4.5V, V =0V 1 GS DS 0.050 V =-4.5V, I =-4A GS D (Note 2) Drain-Source On-Resistance R V =-2.5V, I =-4A 0.060 DS(on) GS D V =-1.8V, I =-2A 0.073 GS D (Note 3) 8 g V =-5V, I =-4A Forward Transconductance mS FS DS D (Note 3) Diode Forward Voltage V V =0V, I =-1A -1 V SD GS S (Note 4) Dynamic Characteristics C Input Capacitance iss 1450 C V =-10V,V =0V, f=1MHz 205 Output Capacitance oss DS GS pF Reverse Transfer Capacitance C 160 rss V =0V,V =0V, f=1MHz Gate resistance 6.5 R DS GS g Switching Characteristics Total Gate Charge Q 1.4 2 g Q V =-10V,V =-4.5V,I =-4A nC Gate-Source Charge 0.15 0.25 gs DS GS D Q Gate-Drain Charge 0.2 0.4 gd (Note 4) t 9.5 d(on) Turn-On Delay Time (Note 4) t 17 r V =-10V,V =-4.5V,R =30, Turn-On Rise Time DD GS G ns R =2.5 L (Note 4) t 94 d(off) Turn-Off Delay Time (Note 4) t 35 f Turn-Off Fall Time Note: 2. Repetitive rating,pulse width limited by junction temperature. 3. Pulse Test : Pulse width300s, duty cycle2%. 4. These parameters have no way to verify. Rev.3-4-12012020 2/4 MCCSEMI.COM