Product Information

SI2301S

Name: SI2301S
Brand: Microdiode Electronics
SKU: SI2301S_MicrodiodeElectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

SI2301S electronic component of Microdiode Electronics

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Datasheet

20V 2.3A 70mO@4.5V,3A 1.2W P Channel SOT-23 MOSFETs ROHS

Manufacturer: Microdiode Electronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0275 ea
Line Total: USD 1.38

0 - Global Stock

MOQ: 50 Multiples: 50
Pack Size: 50

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 10 May to Wed. 15 May MOQ : 50 Multiples : 50 SI2301S Microdiode Electronics	50 : USD 0.0245 500 : USD 0.0197 3000 : USD 0.0171 6000 : USD 0.0154 24000 : USD 0.014 51000 : USD 0.0129

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Additional Infomation About Product

The SI2301S is a P-channel SOT-23 MOSFET manufactured by Microdiode Electronics, specified with a maximum voltage rating of 20V, a maximum current rating of 2.3A, and a maximum resistance rating of 70mO @ 4.5V, 3A, 1.2W. This part is RoHS compliant and is suitable for use in various electronic applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Microdiode Electronics may also be referenced as

(MDD) Jiangsu Yutai Elec
MDD(Microdiode Electronics)
MDDï¼ˆMicrodiode Electronicsï¼‰
Micro diode Electronics
Microdiode Electronics

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Manufacturer Microdiode Electronics Microdiode Electronics
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 SOT - 23
Brand Category Microdiode Electronics Microdiode Electronics
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 2.3 A 2.3 A
Drain Source On Resistance Rdson@Vgs Id 70 mOhms @4.5V , 3A 70 mOhms @4.5V , 3A
Power Dissipation Pd 1.2 W 1.2 W
Gate Threshold Voltage Vgsth@Id 600 mV @250uA 600 mV @250uA
Reverse Transfer Capacitance Crss@Vds 45 pF @10V 45 pF @10V
Type P Channel P Channel
Input Capacitance Ciss@Vds 330 pF @10V 330 pF @10V
Total Gate Charge Qg@Vgs 800 pC @4.5V 800 pC @4.5V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)