512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA, PC28F00BP33EFA Security Features One-time programmable register: 64 OTP bits, High performance programmed with unique information from Mi- Easy BGA package features cron 2112 OTP bits available for customer pro- 95ns initial access for 512Mb, 1Gb Easy BGA gramming 100ns initial access for 2Gb Easy BGA Absolute write protection: V = V PP SS 25ns 16-word asychronous page read mode Power-transition erase/program lockout 52 MHz (Easy BGA) with zero WAIT states and Individual zero-latency block locking 17ns clock-to-data output synchronous burst Individual block lock-down read mode Password access 4-, 8-, 16-, and continuous word options for burst Software mode 25s (TYP) program suspend TSOP package features 25s (TYP) erase suspend 105ns initial access for 512Mb, 1Gb TSOP Flash Data Integrator optimized Both Easy BGA and TSOP package features Basic command set and extended function Inter- Buffered enhanced factory programming (BEFP) face (EFI) command set compatible at 2 MB/s (TYP) using a 512-word buffer Common flash interface 3.0V buffered programming at 1.46 MB/s (TYP) Density and Packaging using a 512-word buffer 56-lead TSOP package (512Mb, 1Gb) Architecture 64-ball Easy BGA package (512Mb, 1Gb, 2Gb) MLC: highest density at lowest cost 16-bit wide data bus Symmetrically blocked architecture (512Mb, 1Gb, Quality and reliabilty 2Gb) JESD47 compliant Asymmetrically blocked architecture (512Mb, Operating temperature: 40C to +85C 1Gb) four 32KB parameter blocks: top or bottom Minimum 100,000 ERASE cycles per block configuration 65nm process technology 128KB main blocks Blank check to verify an erased block Voltage and power V (core) voltage: 2.33.6V CC V (I/O) voltage: 2.33.6V CCQ Standy current: 70A (TYP) for 512Mb 75A (TYP) for 1Gb 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667b8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 p33 65nm MLC 512Mb-1gb 2gb.pdf - Rev. C 12/13 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb, 1Gb, 2Gb: P33-65nm Features Discrete and MCP Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi- cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con- tact the factory for devices not found. Note: Not all part numbers listed here are available for ordering. Table 1: Discrete Part Number Information Part Number Category Category Details Package JS = 56-lead TSOP, lead free PC = 64-ball Easy BGA, lead-free Product Line 28F = Micron Flash memory Density 512 = 512Mb 00A = 1Gb 00B = 2Gb Product Family P33 (V = 2.33.6V V = 2.33.6V) CC CCQ Parameter Location B/T = Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm Features * Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor- mation. Sample part number: JS28F512P33EF* Table 2: Standard Part Numbers Density Configuration Medium JS PC 512Mb Bottom boot Tray JS28F512P33BFD PC28F512P33BFD Tape & Reel Top boot Tray JS28F512P33TFA PC28F512P33TFA Tape & Reel Uniform Tray JS28F512P33EFA PC28F512P33EFA Tape & Reel 1Gb Bottom boot Tray JS28F00AP33BFA PC28F00AP33BFA Tape & Reel Top boot Tray JS28F00AP33TFA PC28F00AP33TFA Tape & Reel Uniform Tray JS28F00AP33EFA PC28F00AP33EFA Tape & Reel 2Gb Uniform Tray PC28F00BP33EFA Tape & Reel PDF: 09005aef845667b8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 p33 65nm MLC 512Mb-1gb 2gb.pdf - Rev. C 12/13 EN 2013 Micron Technology, Inc. All rights reserved.