Product Information

M28W160CB70N6F

M28W160CB70N6F electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 16Mbit 1M x 16bit 70ns 48-Pin TSOP T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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M28W160CT M28W160CB 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V Core Power Supply DD V = 1.65V to 3.6V for Input/Output DDQ FBGA V = 12V for fast Program (optional) PP ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME: TFBGA46 (ZB) 10s typical 6.39 x 6.37mm Double Word Programming Option COMMON FLASH INTERFACE 64 bit Security Code MEMORY BLOCKS Parameter Blocks (Top or Bottom location) Main Blocks BLOCK LOCKING TSOP48 (N) All blocks locked at Power Up 12 x 20mm Any combination of blocks can be locked WP for Block Lock-Down SECURITY 64 bit user Programmable OTP cells ELECTRONIC SIGNATURE 64 bit unique device identifier Manufacturer Code: 20h One Parameter Block Permanently Lockable Table 1. Device Codes AUTOMATIC STAND-BY MODE Root Part Number Device Code PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per M28W160CT 88CEh BLOCK M28W160CB 88CFh ECOPACK PACKAGES AVAILABLE December 2007 1/50M28W160CT, M28W160CB TABLE OF CONTENTS SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 6 Table 2. Signal Names . 6 Figure 3. TSOP Connections . 6 Figure 4. TFBGA Connections (Top view through package) . 7 Figure 5. Block Addresses . 8 Figure 6. Security Block and Protection Register Memory Map 8 SIGNAL DESCRIPTIONS 9 Address Inputs (A0-A19) 9 Data Input/Output (DQ0-DQ15) . 9 Chip Enable (E) . 9 Output Enable (G) . 9 Write Enable (W) 9 Write Protect (WP) . 9 Reset (RP) . 9 V Supply Voltage 9 DD V Supply Voltage . 9 DDQ V Program Supply Voltage 9 PP V Ground 9 SS BUS OPERATIONS 10 Read . 10 Write . 10 Output Disable . 10 Standby 10 Automatic Standby 10 Reset 10 Read Electronic Signature Command . 11 Table 3. Bus Operations . 10 COMMAND INTERFACE . 11 Read Memory Array Command 11 Read Status Register Command .11 Read Electronic Signature Command . 11 Read CFI Query Command . 11 Block Erase Command 11 Program Command . 11 Double Word Program Command 12 Clear Status Register Command . 12 Program/Erase Suspend Command 12 Program/Erase Resume Command 12 Protection Register Program Command . 12 Block Lock-Down Command 13 2/50

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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