Product Information

M29W064FB70N3E

M29W064FB70N3E electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns Automotive 48-Pin TSOP Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

12: USD 3.0076 ea
Line Total: USD 36.09

0 - Global Stock
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 12
Multiples : 1
12 : USD 3.0076

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
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M29W064FT M29W064FB 64-Mbit (8 Mbit x8 or 4 Mbit x16, page, boot block) 3 V supply flash memory Preliminary Data Features Supply voltage V = 2.7 V to 3.6 V for program, erase, CC read V =12 V for fast program (optional) PP Asynchronous random/page read Page width: 4 words TSOP48 (N) Page access: 25 ns 12 x 20 mm Random access: 60, 70 ns Programming time 10 s per byte/word typical FBGA 4 words/8 bytes program 135 memory blocks TFBGA48 (ZA) 1 boot block and 7 parameter blocks, 6x8mm 8 Kbytes each (top or bottom location) 127 main blocks, 64 Kbytes each 100,000 program/erase cycles per block Program/erase controller Low power consumption Embedded byte/word program algorithms Standby and automatic standby Program/erase suspend and resume Electronic signature Read from any block during program Manufacturer code: 0020h suspend Automotive device grade 3 Read and program another block during Temperature: -40 to 125 C erase suspend Automotive grade certified (AEC-Q100) Unlock Bypass Program command Automotive device grade 6 Faster production/batch programming Temperature: -40 to 85 C V /WP pin for fast program and write protect PP Automotive grade certified (AEC-Q100) Temporary block unprotection mode RoHS compliant packages Common flash interface 64-bit security code Table 1. Device summary Root part number Device code M29W064FT 22EDh M29W064FB 22FDh November 2008 Rev 4 1/69 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.numonyx.com 1 change without notice.Contents M29W064FT, M29W064FB Contents 1 Description . 7 2 Signal descriptions . 11 2.1 Address inputs (A0-A21) 11 2.2 Data inputs/outputs (DQ0-DQ7) .11 2.3 Data inputs/outputs (DQ8-DQ14) 11 2.4 Data input/output or address input (DQ15A1) .11 2.5 Chip Enable (E) .11 2.6 Output Enable (G) .11 2.7 Write Enable (W) . 12 2.8 V /write protect (V WP) . 12 PP PP/ 2.9 Reset/block temporary unprotect (RP) . 13 2.10 Ready/busy output (RB) 13 2.11 Byte/word organization select (BYTE) . 13 2.12 V supply voltage (2.7 V to 3.6 V) . 14 CC 2.13 V ground 14 SS 3 Bus operations 15 3.1 Bus read 15 3.2 Bus write 15 3.3 Output disable . 15 3.4 Standby 15 3.5 Automatic standby 16 3.6 Special bus operations . 16 3.6.1 Electronic signature 16 3.6.2 Block protect and chip unprotect 16 4 Command interface . 18 4.1 Standard commands 18 4.1.1 Read/Reset command 18 4.1.2 Auto Select command 18 4.1.3 Read CFI Query command 18 2/69

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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