Product Information

M29DW323DT70ZE6E

M29DW323DT70ZE6E electronic component of Micron

Datasheet
Flash Memory STD FLASH 32 MEG

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.436 ea
Line Total: USD 3.44

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.4445
10 : USD 3.0549
100 : USD 2.973
250 : USD 2.7956
500 : USD 2.5594
2000 : USD 2.5358

     
Manufacturer
Product Category
Package / Case
Memory Size
Interface Type
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Flash Memory Type
Flash Memory Configuration
Memory Case Style
No. Of Pins
Access Time
Product Range
Rohs Phthalates Compliant
Msl
Svhc
Memory Type
Memory Voltage Vcc
Operating Temperature Range
Sector Type
Supply Voltage Range
Termination Type
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
M29F160FT5AN6E2 electronic component of Micron M29F160FT5AN6E2

NOR Flash Parallel 5V 16M-bit 2M x 8/1M x 16 55ns Automotive 48-Pin TSOP Tray
Stock : 0

M29F200FB55M3F2 electronic component of Micron M29F200FB55M3F2

NOR Flash Parallel 5V 2M-bit 256K x 8/128K x 16 55ns Automotive 44-Pin SO W T/R
Stock : 0

M29F400FB55M3E2 electronic component of Micron M29F400FB55M3E2

NOR Flash Parallel 5V 4M-bit 512K x 8/256K x 16 55ns Automotive 44-Pin SO W Tray
Stock : 0

M29F200FT55N3E2 electronic component of Micron M29F200FT55N3E2

NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 55ns 48-Pin TSOP Tray
Stock : 0

M29F160FB5AN6E2 electronic component of Micron M29F160FB5AN6E2

NOR Flash Parallel 5V 16M-bit 2M x 8/1M x 16 55ns Automotive 48-Pin TSOP Tray
Stock : 0

M29F160FB55N3E2 electronic component of Micron M29F160FB55N3E2

NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 55ns 48-Pin TSOP Tray
Stock : 0

M29F400FB55M3F2 electronic component of Micron M29F400FB55M3F2

NOR Flash Parallel 5V 4M-bit 512K x 8/256K x 16 55ns Automotive 44-Pin SO W T/R
Stock : 0

M29F200FB5AN6E2 electronic component of Micron M29F200FB5AN6E2

NOR Flash Parallel 5V 2M-bit 256K x 8/128K x 16 55ns Automotive 48-Pin TSOP Tray
Stock : 0

M29F200FB55N3E2 electronic component of Micron M29F200FB55N3E2

NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 55ns 48-Pin TSOP Tray
Stock : 0

M29F160FB5AN6F2 electronic component of Micron M29F160FB5AN6F2

NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 55ns 48-Pin TSOP T/R
Stock : 0

Image Description
M29DW323DT70N6E electronic component of Micron M29DW323DT70N6E

Flash Memory 4Mx8 or 2Mx16 70ns
Stock : 0

M29DW128G70NF6E electronic component of Micron M29DW128G70NF6E

NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 70ns 56-Pin TSOP Tray
Stock : 0

M29DW128G60ZA6E electronic component of Micron M29DW128G60ZA6E

NOR Flash Parallel 128Mbit 16 64/64
Stock : 0

M28W160ECT70ZB6E electronic component of Micron M28W160ECT70ZB6E

NOR Flash Parallel 3V/3.3V 16M-bit 1M x 16 70ns 46-Pin TFBGA Tray
Stock : 0

M28W160ECB70ZB6E electronic component of Micron M28W160ECB70ZB6E

NOR Flash Parallel 3V/3.3V 16M-bit 1M x 16 70ns 46-Pin TFBGA Tray
Stock : 0

M29W800DT70N6E electronic component of Micron M29W800DT70N6E

Flash Memory STD FLASH 8 MEG
Stock : 0

M29W800DB70N6E electronic component of Micron M29W800DB70N6E

NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TSOP Tray
Stock : 0

M29W640GT70NA6E electronic component of Micron M29W640GT70NA6E

NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TSOP Tray
Stock : 0

M29W640GB70ZA6F electronic component of Micron M29W640GB70ZA6F

NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TFBGA T/R
Stock : 0

M29W640FT70ZA6E electronic component of Micron M29W640FT70ZA6E

NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TFBGA Tray
Stock : 0

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase and DD Read V = V = 2.4V to 3.6V for I/O Buffers DDQ DDQIN V = 12V for fast Program (optional) PP HIGH PERFORMANCE Access Time: 80, 90 and 100ns PQFP80 (T) 56MHz Effective Zero Wait-State Burst Read Synchronous Burst Reads Asynchronous Page Reads HARDWARE BLOCK PROTECTION BGA WP pin Lock Program and Erase SOFTWARE BLOCK PROTECTION Tuning Protection to Lock Program and LBGA80 (ZA) Erase with 64 bit User Programmable Pass- 10 x 8 ball array word (M58BW016B version only) OPTIMIZED for FDI DRIVERS Fast Program / Erase suspend latency time < 6s Common Flash Interface MEMORY BLOCKS 8 Parameters Blocks (Top or Bottom) 31 Main Blocks LOW POWER CONSUMPTION 5A Typical Deep Power Down 60A Typical Standby Automatic Standby after Asynchronous Read ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code M58BW016xT: 8836h Bottom Device Code M58BW016xB: 8835h May 2003 1/63M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB TABLE OF CONTENTS SUMMARY DESCRIPTION . 6 Figure 2. Logic Diagram . 7 Table 1. Signal Names 7 Figure 3. LBGA Connections (Top view through package) . 8 Figure 4. PQFP Connections (Top view through package) . 9 Block Protection 10 Tuning Block Protection 10 Table 2. Top Boot Block Addresses, M58BW016BT, M58BW016DT 11 Table 3. Bottom Boot Block Addresses, M58BW016BB, M58BW016DB . 12 SIGNAL DESCRIPTIONS . 13 Address Inputs (A0-A18) . 13 Data Inputs/Outputs (DQ0-DQ31) 13 Chip Enable (E) 13 Output Enable (G) 13 Output Disable (GD) . 13 Write Enable (W) . 13 Reset/Power-Down (RP) . 13 Latch Enable (L) 13 Burst Clock (K) . 14 Burst Address Advance (B) . 14 Valid Data Ready (R) 14 Write Protect (WP) 14 Supply Voltage (V 14 DD) Output Supply Voltage (V ) . 14 DDQ Input Supply Voltage (V ) 14 DDQIN Program/Erase Supply Voltage (V ). . 14 PP Ground (V and V ) 14 SS SSQ BUS OPERATIONS 15 Asynchronous Bus Operations 15 Asynchronous Bus Read . 15 Asynchronous Latch Controlled Bus Read . 15 Asynchronous Page Read 15 Asynchronous Bus Write . 15 Asynchronous Latch Controlled Bus Write . 15 Output Disable . 16 Standby 16 Automatic Low Power. . 16 Power-Down. 16 Electronic Signature . 16 Table 4. Asynchronous Bus Operations 16 Table 5. Asynchronous Read Electronic Signature Operation . 17 2/63

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted