Product Information

M29W800DT70N6F

M29W800DT70N6F electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TSOP T/R
Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 1.6668 ea
Line Total: USD 10

7961 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 6  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
906 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 6
Multiples : 1
6 : USD 0.8909
10 : USD 0.856
25 : USD 0.8338
50 : USD 0.8198
100 : USD 0.8006
1000 : USD 0.7812

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Deleted
LoadingGif

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Additional Infomation About Product

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage V = 2.7 V to 3.6 V for program, erase CC and read Access times: 45, 70, 90 ns Programming time 10 s per byte/word typical SO44 (M) 19 memory blocks 1 boot block (top or bottom location) 2 parameter and 16 main blocks Program/erase controller Embedded byte/word program algorithms Erase suspend and resume modes TSOP48 (N) Read and program another block during 12 x 20 mm erase suspend Unlock bypass program command FBGA Faster production/batch programming Temporary block unprotection mode TFBGA48 (ZE) Common flash interface 6 x 8 mm 64-bit security code Low power consumption Standby and automatic standby 100,000 program/erase cycles per block Electronic signature Manufacturer code: 0020h Top device code M29W800DT: 22D7h Bottom device code M29W800DB: 225Bh April 2009 Rev 11 1/52 www.numonyx.com 1Contents M29W800DT, M29W800DB Contents 1 Description . 6 2 Signal descriptions . 12 2.1 Address inputs (A0-A18) . 12 2.2 Data inputs/outputs (DQ0-DQ7) 12 2.3 Data inputs/outputs (DQ8-DQ14) . 12 2.4 Data input/output or address input (DQ15A-1) . 12 2.5 Chip enable (E) 12 2.6 Output enable (G) . 12 2.7 Write enable (W) . 13 2.8 Reset/block temporary unprotect (RP) . 13 2.9 Ready/busy output (RB) 13 2.10 Byte/word organization select (BYTE) . 13 2.11 V supply voltage 13 CC 2.12 V ground 14 SS 3 Bus operations 15 3.1 Bus read 15 3.2 Bus write 15 3.3 Output disable . 15 3.4 Standby 15 3.5 Automatic standby 15 3.6 Special bus operations . 16 3.6.1 Electronic signature 16 3.6.2 Block protection and blocks unprotection . 16 4 Command interface . 17 4.1 Read/Reset command . 17 4.2 Auto Select command . 17 4.3 Program command 17 4.4 Unlock Bypass command . 18 4.5 Unlock Bypass Program command . 18 2/52

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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