2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM Features DDR2 SDRAM VLP Mini-RDIMM MT18HVS25672PKZ 2GB MT18HVS51272PKZ 4GB Figure 1: 244-Pin VLP Mini-RDIMM Features Module height: 18.2mm (0.72 in) 244-pin, very low profile mini-registered dual in-line memory module (VLP Mini-RDIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 2GB (256 Meg x 72) or 4GB (512 Meg x 72) Supports ECC error detection and correction Options Marking Dual-rank, TwinDie (2COB) DRAM devices Parity P V = V = 1.8V DD DDQ Operating temperature V = 1.73.6V DDSPD Commercial (0C T +70C) None A 1 JEDEC-standard 1.8V I/O (SSTL 18-compatible) Industrial (40C T +85C) I A Package Differential data strobe (DQS, DQS ) option 244-pin DIMM (halogen-free) Z 4n-bit prefetch architecture 2 Frequency/CL Multiple internal device banks for concurrent 3 2.5ns CL = 5 (DDR2-800) -80E operation 2.5ns CL = 6 (DDR2-800) -800 Programmable CAS latency (CL) 3.0ns CL = 5 (DDR2-667) -667 Posted CAS additive latency (AL) Notes: 1. Contact Micron for industrial temperature t WRITE latency = READ latency - 1 CK module offerings. Programmable burst lengths (BL): 4 or 8 2. CL = CAS (READ) latency registered mode Adjustable data-output drive strength will add one clock cycle to CL. 3. Not available in 4GB module density. 64ms, 8192-cycle refresh On-die termination (ODT) Serial presence-detect (SPD) with EEPROM Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83d94997 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 hvs18c256 512x72pkz.pdf - Rev. D 11/12 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM Features Table 2: Addressing Parameter 2GB 4GB Refresh count 8K 8K Row address 16K A 13:0 32K A 14:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb TwinDie (256 Meg x 8) 4Gb TwinDie (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H256M8, 2Gb TwinDie DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVS25672PK(I)Z-80E 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVS25672PK(I)Z-800 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVS25672PK(I)Z-667 2GB 256 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H512M8, 4Gb TwinDie DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVS51272PK(I)Z-800 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVS51272PK(I)Z-667 4GB 512 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18HVS25672PKZ-80EH1. PDF: 09005aef83d94997 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 hvs18c256 512x72pkz.pdf - Rev. D 11/12 EN 2010 Micron Technology, Inc. All rights reserved.