Product Information

MT18RTF25672FDZ-667H1D6

MT18RTF25672FDZ-667H1D6 electronic component of Micron

Datasheet
DRAM Module DDR2 SDRAM 2Gbyte 240FBDIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 154.8678 ea
Line Total: USD 154.87

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 154.8678
10 : USD 131.1919
50 : USD 123.9012
100 : USD 74.3365

     
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2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT18RTF25672FDZ 2GB Information in the 1.8V DDR2 FBDIMM data sheet is Features directly applicable to this 1.55V DDR2 FBDIMM, ex- 240-pin, fully buffered DIMM (FBDIMM) cept where stated otherwise in this data sheet. Very low-power DDR2 operation Figure 1: 240-Pin FBDIMM (MO-256 R/C B) Component configuration: 256 Meg x 8 1.5V V 1.9V for DDR2 SDRAM DD Module height: 30.35mm (1.19in) 1.5V V 1.9V for advanced memory buffer DD (AMB) DRAM I/O V = 1.55V DD Backward compatible with systems designed for the standard (1.8V) FBDIMM Dual rank Options Marking Halogen-free Package 240-pin DIMM (halogen-free) Z Functionality 1 Frequency/CL This 1.55V FBDIMM consumes less power than a stand- 3.0ns @ CL = 5 (DDR2-667) -667 ard 1.8V FBDIMM. However, it has the same timing Note: 1. CL = CAS (READ) latency. and operating parameters as a standard FBDIMM. This enables backward compatibility with systems de- signed for use with standard FBDIMMs. Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 PDF: 09005aef84281416 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 rtf18c256x72fdz.pdf - Rev. A 9/10 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features Table 2: Addressing Parameter 2GB Refresh count 8K Device bank address 8 BA[2:0] Device page size per bank 1KB Device configuration 1Gb (256 Meg x 8) Row address 16K A[13:0] Column address 1K A[9:0] Module rank address 2 S#[1:0] Table 3: Part Numbers and Timing Parameters 2GB 1 Base device: MT47R128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles Link 2 t t Part Number Density Configuration Bandwidth Data Rate (CL - RCD - RP) Transfer Rate MT18RTF25672FDZ-667__ 2GB 256 Meg x 72 PC2-5300 3.0ns/667 MT/s 5-5-5 4.0 GT/s 1. Data sheets for the base devices can be found on Microns Web site. Notes: 2. All part numbers end with a four-place code (not shown) that designates component, AMB vendor, and PCB revisions. Consult factory for current revision codes. Example: MT18RTF25672FDZ-667H1D6. PDF: 09005aef84281416 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 rtf18c256x72fdz.pdf - Rev. A 9/10 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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