Product Information

MT25QL256ABA8E12-1SAT

MT25QL256ABA8E12-1SAT electronic component of Micron

Datasheet
NOR Flash SPI FLASH NOR SLC 64MX4 TBGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1122: USD 2.5794 ea
Line Total: USD 2894.09

0 - Global Stock
MOQ: 1122  Multiples: 1122
Pack Size: 1122
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1122
Multiples : 1122
1122 : USD 2.5794

     
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256Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QL256ABA Options Marking Features Voltage SPI-compatible serial bus interface 2.73.6V L Single and double transfer rate (STR/DTR) Density Clock frequency 256Mb 256 133 MHz (MAX) for all protocols in STR Device stacking 90 MHz (MAX) for all protocols in DTR Monolithic A Dual/quad I/O commands for increased through- Device generation B put up to 90 MB/s Die revision A Supported protocols in both STR and DTR Pin configuration Extended I/O protocol RESET and HOLD# 8 Dual I/O protocol Sector Size Quad I/O protocol 64KB E Execute-in-place (XIP) Packages JEDEC-standard, RoHS- PROGRAM/ERASE SUSPEND operations compliant Volatile and nonvolatile configuration settings 24-ball T-PBGA 05/6mm x 8mm (5 x 12 Software reset 5 array) Additional reset pin for selected part numbers 24-ball T-PBGA 05/6mm x 8mm (4 x 14 3-byte and 4-byte address modes enable memory 6 array) access beyond 128Mb 16-pin SOP2, 300 mil SF Dedicated 64-byte OTP area outside main memory (SO16W, SO16-Wide, SOIC-16) Readable and user-lockable W-PDFN-8 6mm x 5mm (MLP8 6mm W7 Permanent lock with PROGRAM OTP command x 5mm) Erase capability W-PDFN-8 8mm x 6mm (MLP8 8mm W9 Bulk erase x 6mm) Sector erase 64KB uniform granularity Standard security 0 Subsector erase 4KB, 32KB granularity Special options Security and write protection Standard S Volatile and nonvolatile locking and software Automotive A write protection for each 64KB sector Operating temperature range Nonvolatile configuration locking From 40C to +85C IT Password protection From 40C to +105C AT Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA19h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) 09005aef85b0e00a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q-qljs-L256-ABA-xxT.pdf - Rev. H 10/16 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C Density Special Options 064 = 64Mb (8MB) S = Standard 128 = 128Mb (16MB) A = Automotive grade AEC-Q100 256 = 256Mb (32MB) 512 = 512Mb (64MB) Security Features 01G = 1Gb (128MB) 0 = Standard default security 02G = 2Gb (256MB) Package Codes Stack 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) A = 1 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) B = 2 die/1 S# SC = 8-pin SOP2, 150 mil C = 4 die/1 S# SE = 8-pin SOP2, 208 mil SF = 16-pin SOP2, 300 mil Device Generation W7 = 8-pin W-PDFN, 6 x 5mm B = 2nd generation W9 = 8-pin W-PDFN, 8 x 6mm 1 5x = WLCSP package Die Revision A = Rev. A Sector size B = Rev. B E = 64KB sectors, 4KB and 32KB sub-sectors Pin Configuration Option 1 = HOLD# pin 3 = RESET# pin 8 = RESET# & HOLD# pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. 09005aef85b0e00a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q-qljs-L256-ABA-xxT.pdf - Rev. H 10/16 EN 2014 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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