MT29F1G08ABAEAWP:E TR Micron

Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Ready/busy (R/B ) signal provides a hardware Features method for detecting operation completion 1 Open NAND Flash Interface (ONFI) 1.0-compliant WP signal: write protect entire device Single-level cell (SLC) technology First block (block address 00h) is valid when ship- Organization ped from factory with ECC. For minimum required Page size x8: 2112 bytes (2048 + 64 bytes) ECC, see Error Management. Page size x16: 1056 words (1024 + 32 words) Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Block size: 64 pages (128K + 4K bytes) cles are less than 1000 Plane size: 2 planes x 512 blocks per plane RESET (FFh) required as first command after pow- Device size: 1Gb: 1024 blocks er-on Asynchronous I/O performance Alternate method of device initialization (Nand In- t t 3 RC/ WC: 20ns (3.3V), 25ns (1.8V) it) after power up (contact factory) Array performance Quality and reliability Read page: 25s Data retention: JESD47 compliant see qualifica- Program page: 200s (TYP, 3.3V and 1.8V) tion report Erase block: 700s (TYP) Endurance: 100,000 PROGRAM/ERASE cycles Command set: ONFI NAND Flash Protocol Operating Voltage Range Advanced command set V : 2.73.6V CC Program page cache mode V : 1.71.95V CC Read page cache mode Operating temperature: One-time programmable (OTP) mode Commercial (CT): 0C to +70C Two-plane commands Industrial (IT): 40C to +85C Read unique ID Package 2 Internal data move 48-pin TSOP Type 1, CPL Block lock (1.8V only) 1. The ONFI 1.0 specification is available at Notes: Operation status byte provides software method for www.onfi.org. detecting 2. CPL = Center parting line. Operation completion 3. Available only in the 1.8V VFBGA package. Pass/fail condition Write-protect status Internal data move operations supported within the device from which data is read PDF: 09005aef847d5585 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m68m nonecc embedded it ct.pdf - Rev. L 2/15 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 1G 08 A B B E A HC IT ES :E Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density MS = Mechanical sample 1G = 1Gb QS = Qualification sample Device Width Special Options 08 = 8-bit Blank 16 = 16-bit X = Product longevity program (PLP) Level Operating Temperature Range A= SLC Blank = Commercial (0C to +70C) IT = Industrial (40C to +85C) Classification Mark Die nCE RnB I/O Channels Speed Grade B 1 1 1 1 Blank Operating Voltage Range Package Code A = 3.3V (2.73.6V) WP = 48-pin TSOP Type 1 B = 1.8V (1.71.95V) HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Feature Set E = Feature set E Interface A = Async only PDF: 09005aef847d5585 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m68m nonecc embedded it ct.pdf - Rev. L 2/15 EN 2015 Micron Technology, Inc. All rights reserved.