Product Information

MT29F1G08ABAFAH4-ITE:F

MT29F1G08ABAFAH4-ITE:F electronic component of Micron

Datasheet
NAND Flash SLC 1G 128MX8 FBGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1260: USD 2.1208 ea
Line Total: USD 2672.21

0 - Global Stock
MOQ: 1260  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1260
Multiples : 1
1260 : USD 2.1208
2520 : USD 2.0667
5040 : USD 2.0179
7560 : USD 1.9688
12600 : USD 1.9439

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1260
Multiples : 1260
1260 : USD 2.2885
2520 : USD 2.2425
5040 : USD 2.208
10080 : USD 2.208
25200 : USD 2.208

     
Manufacturer
Product Category
Series
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Packaging
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
MT29F1G08ABBDAH4-IT:D electronic component of Micron MT29F1G08ABBDAH4-IT:D

SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin VFBGA Tray
Stock : 0

MT29F1G08ABBDAH4-IT:D TR electronic component of Micron MT29F1G08ABBDAH4-IT:D TR

NAND Flash SLC 1G 128MX8 FBGA
Stock : 0

MT29F1G08ABBDAHC:D electronic component of Micron MT29F1G08ABBDAHC:D

SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin VFBGA Tray
Stock : 0

MT29F1G08ABBDAHC-IT:D TR electronic component of Micron MT29F1G08ABBDAHC-IT:D TR

SLC NAND Flash Parallel 1.8V 1Gbit 128M X 8bit 25ns 63-Pin VFBGA T/R
Stock : 0

MT29F1G08ABBDAH4:D electronic component of Micron MT29F1G08ABBDAH4:D

SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin VFBGA Tray
Stock : 0

MT29F1G08ABBDAHC-IT:D electronic component of Micron MT29F1G08ABBDAHC-IT:D

SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin VFBGA Tray
Stock : 0

MT29F1G08ABAFAH4-ITE:F TR electronic component of Micron MT29F1G08ABAFAH4-ITE:F TR

NAND Flash SLC 1G 128MX8 FBGA
Stock : 0

MT29F1G08ABAFAWP-ITE:F TR electronic component of Micron MT29F1G08ABAFAWP-ITE:F TR

NAND Flash SLC 1G 128MX8 TSOP
Stock : 0

MT29F1G08ABBEAH4-AITX:E TR electronic component of Micron MT29F1G08ABBEAH4-AITX:E TR

NAND Flash SLC 1G 128MX8 FBGA
Stock : 0

MT29F1G08ABAFAWP-ITE:F electronic component of Micron MT29F1G08ABAFAWP-ITE:F

NAND Flash SLC 1G 128MX8 TSOP
Stock : 0

Image Description
MT29F256G08CECEBJ4-37ITR:E electronic component of Micron MT29F256G08CECEBJ4-37ITR:E

NAND Flash MLC 256G 32GX8 VBGA QDP
Stock : 0

MT29F2G16ABAEAWP-AIT:E electronic component of Micron MT29F2G16ABAEAWP-AIT:E

SLC NAND Flash Parallel 3.3V 2Gbit 128M x 16bit 48-Pin TSOP-I
Stock : 3066

MT29F2G08ABAEAH4-AATX:E electronic component of Micron MT29F2G08ABAEAH4-AATX:E

SLC NAND Flash Parallel 3.3V 2Gbit 256M 8bit 63-Pin VFBGA
Stock : 0

MT29F8G08ABABAWP-AATX:B electronic component of Micron MT29F8G08ABABAWP-AATX:B

SLC NAND Flash Parallel 3.3V 8Gbit 1G 8bit 48-Pin TSOP-I
Stock : 0

IS34ML04G081-TLI-TR electronic component of ISSI IS34ML04G081-TLI-TR

SLC NAND Flash Parallel 3.3V 4Gbit 512M X 8bit 70ns 48-Pin TSOP-I
Stock : 0

SST26VF064BEUI-104I/MF electronic component of Microchip SST26VF064BEUI-104I/MF

NOR Flash 64Mb 2.3V TO 3.6V SQI Flash Memory w/EUI
Stock : 25

SST26VF064BEUI-104I/SM electronic component of Microchip SST26VF064BEUI-104I/SM

NOR Flash 64Mb 2.3V TO 3.6V SQI Flash Memory w/EUI
Stock : 3028

MX25R2035FOIL0/TUBE electronic component of Macronix MX25R2035FOIL0/TUBE

FLASH memory; NOR Flash; 2Mbit; 108MHz; 1.65÷3.6V; TSSOP8; serial
Stock : 0

MX25R8035FM1IL0/TUBE electronic component of Macronix MX25R8035FM1IL0/TUBE

FLASH memory; NOR Flash; 8Mbit; 108MHz; 1.65÷3.6V; SOP8; serial
Stock : 0

MX25U2033EM1I-12G/TUBE electronic component of Macronix MX25U2033EM1I-12G/TUBE

FLASH memory; NOR Flash; 2Mbit; 84MHz; 1.65÷2V; SOP8; serial
Stock : 0

Micron Confidential and Proprietary 1Gb: x8 NAND Flash Memory Features NAND Flash Memory MT29F1G08ABAFAWP-ITE:F, MT29F1G08ABAFAH4-ITE:F, MT29F1G08ABBFAH4-ITE:F 2 ECC: 8-bit internal ECC is enabled by default. It Features can not be disabled 1 Open NAND Flash Interface (ONFI) 1.0-compliant Blocks 7-0 are valid when shipped from factory with Single-level cell (SLC) technology ECC Organization RESET (FFh) required as first command after pow- Page size x8: 2176 bytes (2048 + 128 bytes) er-on Block size: 64 pages (128K + 8K bytes) Alternate method of device initialization after pow- Plane size: 1 planes x 1024 blocks per plane er-up (contact factory) Device size: 1Gb: 1024 blocks Internal data move operations supported within the Asynchronous I/O performance plane from which data is read t t RC/ WC: 20ns/20ns (3.3V), 30ns/30ns (1.8V) Quality and reliability Array performance Endurance: 100,000 PROGRAM/ERASE cycles Read page: 80s Data retention: JESD47G-compliant see qualifi- Program page: 220s (TYP 3.3V/1.8V) cation report Erase block: 2ms (TYP) Additional: Uncycled data retention: 10 years Command set: ONFI NAND Flash Protocol 24/7 85C Advanced command set Operating voltage range Program page cache mode V : 2.73.6V CC Read page cache mode V : 1.71.95V CC Permanent block locking (blocks 47:0) Operating temperature: One-time programmable (OTP) mode Industrial (IT): 40C to +85C Block lock (1.8V only) Package 3 Programmable drive strength 48-pin TSOP type 1, CPL Read unique ID 63-ball VFBGA Internal data move Operation status byte provides software method for 1. The ONFI 1.0 specification is available at Notes: detecting www.onfi.org. Operation completion 2. Refer to the Part Numbering Information to Pass/Fail condition check the default status of the ECC. If ECC is enabled by default, it can not be disabled. Write-protect status 3. CPL = Center parting line. Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion WP signal: Write protect entire device CCMTD-1725822587-10323 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m78a 1gb ecc on embedded nand.pdf Rev. E 6/19 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 1Gb: x8 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 A B A F A H4 - AAT ES :F Design Revision (shrink) Micron Technology D = Design Revision D Product Family E = Design Revision E 29F = NAND Flash memory F = Design Revision F G = Design Revision G Density 1G = 1Gb Production Status 2G = 2Gb Blank = Production 4G = 4Gb ES = Engineering sample 8G = 8Gb MS = Mechanical sample QS = Qualification sample 16G = 16Gb Device Width Special Options 08 = 8-bit E = Internal ECC enabled by default (Parallel) 16 = 16-bit Blank = Internal ECC disabled by default (Parallel) Level Operating Temperature Range A = SLC Blank = Commercial (0C to +70C) IT = Industrial (40C to +85C) Classification AIT = Automotive Industrial (40C to +85C) Mark Die nCE RnB I/O Channel AAT = Automotive (40C to +105C) B 1 1 1 1 Speed Grade D 2 1 1 1 12 = 166 MT/s (synchronous mode) J 4 2 2 1 Blank = Asynchronous mode Operating Voltage Range Package Code A = 3.3V (2.73.6V) SF = 16-pin SO (10.3mm x 10.3mm x 2.65mm) B = 1.8V (1.71.95V) WB = 8-pin U-PDFN (8mm x 6mm x 0.65mm) C = V : 3.3V (2.73.6V) V : 1.8V (1.71.95V) CC CCQ W9 = 8-pin W-PDFN (8mm x 6mm) 12 = 24-ball TBGA (6mm x 8mm x 1.2mm) Generation Feature Set WP = 48-pin TSOP Type 1 D = Feature set D HC = 63-ball VFBGA (10.5mm x 13mm x 1.0mm) E = Feature set E H4 = 63-ball VFBGA (9mm x 11mm x1.0mm) F = Feature set F G = Feature set G Interface A = Asynchronous only B = Sync/Async CCMTD-1725822587-10323 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m78a 1gb ecc on embedded nand.pdf Rev. E 6/19 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted