Product Information

MT29F8G08ABABAWP-AATX:B TR

MT29F8G08ABABAWP-AATX:B TR electronic component of Micron

Datasheet
NAND Flash SLC 8G 1GX8 TSOP
Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000
1000 : USD 11.1572
10000 : USD 10.7043
100000 : USD 10.4903
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 12.8166
10 : USD 11.8235
25 : USD 11.5936
50 : USD 11.4475
100 : USD 10.8312
250 : USD 10.3612
500 : USD 10.2985
1000 : USD 9.8076
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Timing Type
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Memory Type
Product
Type
Brand
Product Type
Standard
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

Micron Confidential and Proprietary 8Gb Automotive Asynchronous NAND Flash Memory Features Automotive Asynchronous NAND Flash Memory MT29F8G08ABABAWP-AATX:B Operation status byte provides software method for Features detecting 1 Open NAND Flash Interface (ONFI) 2.1-compliant Operation completion Single-level cell (SLC) technology Pass/fail condition Organization Write-protect status Page size x8: 4320 bytes (4096 + 224 bytes) Copyback operations supported within the plane Block size: 128 pages (512K +28 K bytes) from which data is read Plane size: 2 planes x 1024 blocks per plane Quality and reliability Device size: 8Gb: 2048 blocks Data retention: 10 years Asynchronous I/O performance Endurance: 100,000 PROGRAM/ERASE cycles Up to asynchronous timing mode 4 Operating temperature: t t RC/ WC: 25ns (MIN) Automotive (AAT): 40C to +105C Array performance Package Read page: 25s (MAX) 48-pin TSOP Program page: 230s (TYP) Erase block: 700s (TYP) 1. The ONFI 2.1 specification is available at Note: Operating Voltage Range www.onfi.org. V : 2.73.6V CC V : 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 80). RESET (FFh) required as first command after pow- er-on Alternate method of device initialization (Nand In- it) after power up (contact factory) PDF: 09005aef85e656c8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m61a automotive 105C async nand.pdf - Rev. B 06/15 EN Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 8Gb Automotive Asynchronous NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 8G 08 A B A B A WP AA T ES :B Micron Technology Design Revision B = Second revision NAND Flash 29F = NAND Flash memory Production Status Blank = Production ES = Engineering sample Density 8G = 8Gb Special Options Blank Device Width X = Product longevity program (PLP) 08 = 8 bits Operating Temperature Range Level AAT = Automotive (40C to +105C) Bit/Cell A 1-bit Package Code 1 WP = 48-pin TSOP (CPL) Classification Die of CE of R/B I/O Interface B 1 1 1 Common A = Async only 1 Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) CC CCQ Generation Feature Set B = Second set of device features 1. Pb-free package. Note: PDF: 09005aef85e656c8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m61a automotive 105C async nand.pdf - Rev. B 06/15 EN Micron Technology, Inc. All rights reserved.

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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