MT48LC16M16A2TG-75:D TR Micron

MT48LC16M16A2TG-75:D TR electronic component of Micron
MT48LC16M16A2TG-75:D TR Micron
MT48LC16M16A2TG-75:D TR DRAM
MT48LC16M16A2TG-75:D TR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of MT48LC16M16A2TG-75:D TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT48LC16M16A2TG-75:D TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. MT48LC16M16A2TG-75:D TR
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
Datasheet: MT48LC16M16A2TG-75:D TR Datasheet (PDF)
Price (USD)
1000: USD 5.2648 ea
Line Total: USD 5264.8 
Availability : 0
  
QtyUnit Price
1000$ 5.2648
3000$ 5.1983
5000$ 5.1319

Availability 0
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 5.2648
3000$ 5.1983
5000$ 5.1319

   
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We are delighted to provide the MT48LC16M16A2TG-75:D TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT48LC16M16A2TG-75:D TR and other electronic components in the DRAM category and beyond.

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256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 16 Meg x 4 x 4 banks MT48LC32M8A2 8 Meg x 8 x 4 banks MT48LC16M16A2 4 Meg x 16 x 4 banks Options Marking Features Configurations PC100- and PC133-compliant 64 Meg x 4 (16 Meg x 4 x 4 banks) 64M4 Fully synchronous; all signals registered on positive 32 Meg x 8 (8 Meg x 8 x 4 banks) 32M8 edge of system clock 16 Meg x 16 (4 Meg x 16 x 4 banks) 16M16 Internal, pipelined operation; column address can t Write recovery ( WR) be changed every clock cycle t WR = 2 CLK A2 Internal banks for hiding row access/precharge 1 Plastic package OCPL Programmable burst lengths: 1, 2, 4, 8, or full page 1 54-pin TSOP II OCPL (400 mil) TG Auto precharge, includes concurrent auto precharge (standard) and auto refresh modes 1 54-pin TSOP II OCPL (400 mil) P Self refresh mode (not available on AT devices) Pb-free Auto refresh 60-ball TFBGA (x4, x8) (8mm x FB 64ms, 8192-cycle refresh (commercial and 16mm) industrial) 60-ball TFBGA (x4, x8) (8mm x BB 16ms, 8192-cycle refresh (automotive) 16mm) Pb-free LVTTL-compatible inputs and outputs 2 54-ball VFBGA (x16) (8mm x 14 mm) FG Single 3.3V 0.3V power supply 2 54-ball VFBGA (x16) (8mm x 14 mm) BG Pb-free 3 54-ball VFBGA (x16) (8mm x 8 mm) F4 3 54-ball VFBGA (x16) (8mm x 8 mm) B4 Pb-free Timing cycle time 6ns @ CL = 3 (x8, x16 only) -6A 2 7.5ns @ CL = 3 (PC133) -75 7.5ns @ CL = 2 (PC133) -7E Self refresh Standard None 2 4 Low power L , Operating temperature range Commercial (0C to +70C) None Industrial (40C to +85C) IT 4 Automotive (40C to +105C) AT Revision :D/:G 1. Off-center parting line. Notes: 2. Only available on Revision D. 3. Only available on Revision G. 4. Contact Micron for availability. PDF: 09005aef8091e6d1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 256Mb_sdr.pdf - Rev. W 05/15 EN 1999 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb: x4, x8, x16 SDRAM Features Table 1: Key Timing Parameters CL = CAS (READ) latency Clock t t t t Speed Grade Frequency (MHz) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -6A 167 3-3-3 18 18 18 -75 133 3-3-3 20 20 20 -7E 133 2-2-2 15 15 15 Table 2: Address Table Parameter 64 Meg x 4 32 Meg x 8 16 Meg x 16 Configuration 16 Meg x 4 x 4 banks 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks Refresh count 8K 8K 8K Row addressing 8K A[12:0] 8K A[12:0] 8K A[12:0] Bank addressing 4 BA[1:0] 4 BA[1:0] 4 BA[1:0] Column addressing 2K A[9:0], A11 1K A[9:0] 512 A[8:0] Table 3: 256Mb SDR Part Numbering Part Numbers Architecture Package MT48LC64M4A2TG 64 Meg x 4 54-pin TSOP II MT48LC64M4A2P 64 Meg x 4 54-pin TSOP II 1 MT48LC64M4A2FB 64 Meg x 4 60-ball FBGA 1 MT48LC64M4A2BB 64 Meg x 4 60-ball FBGA MT48LC32M8A2TG 32 Meg x 8 54-pin TSOP II MT48LC32M8A2P 32 Meg x 8 54-pin TSOP II 1 MT48LC32M8A2FB 32 Meg x 8 60-ball FBGA 1 MT48LC32M8A2BB 32 Meg x 8 60-ball FBGA MT48LC16M16A2TG 16 Meg x 16 54-pin TSOP II MT48LC16M16A2P 16 Meg x 16 54-pin TSOP II MT48LC16M16A2FG 16 Meg x 16 54-ball FBGA MT48LC16M16A2BG 16 Meg x 16 54-ball FBGA Note: 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef8091e6d1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 256Mb_sdr.pdf - Rev. W 05/15 EN 1999 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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