512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM Features DDR2 SDRAM SODIMM MT8HTF6464HDZ 512MB MT8HTF12864HDZ 1GB Figure 1: 200-Pin SODIMM (MO-224 R/C A) Features Module height: 30mm (1.18in) 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 512MB (64 Meg x 64), 1GB (128 Meg x 64) V = 1.8V DD V = 1.73.6V DDSPD JEDEC-standard 1.8V I/O (SSTL 18-compatible) Differential data strobe (DQS, DQS ) option 4n-bit prefetch architecture Options Marking Multiple internal device banks for concurrent opera- Operating temperature tion Commercial (0C T +70C) D A Programmable CAS latency (CL) 1 Industrial (40C T +85C) T A Posted CAS additive latency (AL) Package t WRITE latency = READ latency - 1 CK 200-pin DIMM (halogen-free) Z 2 Frequency/CL Programmable burst lengths (BL): 4 or 8 2.5ns CL = 6 (DDR2-800) -800 Adjustable data-output drive strength 3.0ns CL = 5 (DDR2-667) -667 64ms, 8192-cycle refresh 1. Contact Micron for industrial temperature Notes: On-die termination (ODT) module offerings. Serial presence detect (SPD) with EEPROM 2. CL = CAS (READ) latency. Gold edge contacts Dual rank Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef831ec770 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf8c64 128x64hdz.pdf - Rev. E 4/14 EN 2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM Features Table 2: Addressing Parameter 512MB 1GB Refresh count 8K 8K Row address 8K A 12:0 8K A 12:0 Device bank address 4 BA 1:0 8 BA 2:0 Device configuration 512Mb (32 Meg x16) 1Gb (64 Meg x 16) Column address 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT47H32M16, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8HTF6464HDZ-800 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT8HTF6464HTZ-800 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT8HTF6464HDZ-667 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT8HTF6464HTZ-667 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H64M16, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8HTF12864HDZ-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT8HTF12864HTZ-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT8HTF12864HDZ-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT8HTF12864HTZ-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8HTF12864HDZ-800M1. PDF: 09005aef831ec770 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf8c64 128x64hdz.pdf - Rev. E 4/14 EN 2008 Micron Technology, Inc. All rights reserved.