4GB (x64, SR) 260-Pin DDR4 SODIMM Features DDR4 SDRAM SODIMM MTA4ATF51264HZ 4GB Figure 1: 260-Pin SODIMM (MO-310 R/C C) Features Module Height: 30mm (1.181 in) DDR4 functionality and operations supported as defined in the component data sheet 260-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC4-2666, PC4-2400, and PC4-2133 4GB (512 Meg x 64) V = 1.20V (NOM) DD V = 2.5V (NOM) PP V = 2.5V (NOM) DDSPD Options Marking Nominal and dynamic on-die termination (ODT) for Operating temperature data, strobe, and mask signals Commercial (0C T 95C) None OPER Low-power auto self refresh (LPASR) Package 260-pin DIMM (halogen-free) Z Data bus inversion (DBI) for data bus Frequency/CAS latency On-die V generation and calibration REFDQ 0.75ns CL = 19 (DDR4-2666) -2G6 Single-rank 0.83ns CL = 17 (DDR4-2400) -2G3 2 On-board I C serial presence-detect (SPD) EEPROM 0.93ns CL = 15 (DDR4-2133) -2G1 8 internal banks 2 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control command and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = Industry 20, t t t Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns) -2G6 PC4-2666 2666 2666 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 13.32 13.32 45.32 -2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5 X26P4QTWDSPK-13-10265 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 atf4c512x64hz.pdf Rev. C 8/16 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB (x64, SR) 260-Pin DDR4 SODIMM Features Table 2: Addressing Parameter 4GB Row address 64K A 15:0 Column address 1K A 9:0 Device bank group address 2 BG0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (512 Meg x 16), 8 banks Module rank address CS0 n Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT40A512M16, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA4ATF51264HZ-2G6 4GB 512 Meg x 64 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA4ATF51264HZ-2G3 4GB 512 Meg x 64 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 MTA4ATF51264HZ-2G1 4GB 512 Meg x 64 17.0 GB/s 0.93ns/2133 MT/s 15-15-15 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA4ATF51264HZ-2G3B1. X26P4QTWDSPK-13-10265 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 atf4c512x64hz.pdf Rev. C 8/16 EN 2016 Micron Technology, Inc. All rights reserved.