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MTFDJAK480MBT-2AN1ZABYY

MTFDJAK480MBT-2AN1ZABYY electronic component of Micron

Datasheet
Solid State Drive 2.5in SAS 480Gbyte 12Gbps 12400Mbps Read 4920Mbps Write 5V 2500000h

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 536.2348 ea
Line Total: USD 536.23

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 536.2348

     
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S600DC Series 2.5-Inch SAS NAND Flash SSD Features S600DC Series 2.5-Inch SAS NAND Flash SSD MTFDJAK400MBS, MTFDJAK400MBT, MTFDJAK800MBS, MTFDJAK800MBT, MTFDJAL1T6MBS, MTFDJAL1T6MBT, MTFDJAL3T2MBS, MTFDJAL3T2MBT, MTFDJAK480MBT, MTFDJAK960MBT, MTFDJAL1T9MBT, MTFDJAL3T8MBT, MTFDJAL1T9MBU, MTFDJAL3T8MBU, MTFDJAK200MBW, MTFDJAK400MBW 4 Endurance: TBW over warranty period Features S630DC (23 DWPD): Four endurance levels 400GB-2.1PB, 480GB-2.6PB, S655DC = 25 DWPD; S650DC = 10 DWPD 800GB-2.9PB, 960GB-5.2PB, S630DC = 23 DWPD; S610DC = <1 DWPD 1600GB-5.8PB, 1920GB-10PB, Micron 16nm MLC NAND Flash 3200GB-12PB, 3840-21PB RoHS-compliant package S610DC (1 DWPD): SAS 1920GB-2.8PB, 3840GB-5.6PB Interface = 12 Gb/s Electrical Speed = 3 Gb/s, 6 Gb/s, 12 Gb/s, and auto-speed Supply voltage: 5 V (5%) and 12 V (5%) DC DC negotiation Mechanical SAS-3 support 2.5-inch drive: 100.5mm 69.85mm 7mm, and SAM-5 compliant 100.5mm 69.85mm 15mm Enterprise sector size support = 512, 520, 524, 528, Field-upgradeable firmware 4096, 4160, 4192, and 4224-byte Power consumption: 9W (TYP) and 12W (MAX) Hot-plug capable Configurable through information exceptions 128-entry command queue depth mode page Digitally signed firmware for SED and non-SED Operating temperature 3 FIPS140-2 level 2 certification option available on 0C to +50C (MAX) each S650DC 2.5-inch device: 400GB, 800GB, 1600GB, and 3200GB 1. Product achieves a mean time to failure Notes: Secure erase via format unit (MTTF) based on population statistics that are not relevant to individual units. Reliability 1 MTTF: 2.5 million device hours 2. 1GB = 1 billion bytes; formatted capacity is less. Static and dynamic wear leveling 17 3. Based on ambient air temperature. Uncorrectable bit error rate (UBER): 1 10 bits transferred 4. Total bytes written (TBW): Warranty de- 2 fined in the product manual is five years or Capacity (unformatted): 200GB, 400GB, 480GB, device expiration as indicated by the device 800GB, 960GB, 1600GB, 1920GB, 3200GB, 3840GB 4 life indicator, whichever comes first. Endurance: TBW over warranty period S655DC (25 DWPD): Warranty: Contact your Micron sales representative 200GB-8PB, 400GB-17PB for further information regarding the product, includ- S650DC (10 DWPD): ing product warranties. 400GB-7PB, 800GB-14PB 1600GB-29PB, 3200GB-58PB CCMTD-1725822587-3891 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 s600dc_series_2_5_sas_ssd.pdf - Rev. H 9/17 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.S600DC Series 2.5-Inch SAS NAND Flash SSD Features Table 1: Performance Notes apply to entire table Sequential Random Random 128KB Transfer 4KB Transfer 4KB Transfer (70/30) Device and Read Write Read Write Mixed Read/Write Average Capacity (MB/s) (MB/s) (KIOPS) (KIOPS) (KIOPS) Latency (s) S655DC 200GB 1550 600 200 120 85 115 400GB 1700 850 200 120 115 115 S650DC 400GB 1550 625 180 67 80 115 800GB 1850 850 200 80 105 115 1600GB 1900 850 200 80 120 115 3200GB 1900 800 200 80 120 115 S630DC 400GB 1400 490 180 20 45 115 480GB 1550 615 180 30 45 115 800GB 1400 710 180 20 45 115 960GB 1700 850 180 30 65 115 1600GB 1600 850 180 20 45 115 1920GB 1850 850 180 30 65 115 3200GB 1600 850 180 20 45 115 3840GB 1850 770 180 30 65 115 S610DC 1920GB 1700 850 190 12 45 115 3840GB 1600 770 190 15 45 115 Notes: 1. Typical I/O performance numbers: measured using an iometer in a steady state region with a queue depth of 32 for sequential and random transfers and write cache enabled; a queue depth of 1 for READ/WRITE laten- cy values. 2. Consistent host system interface, configurations, and variables: maintained with variation only in the drive being tested. 3. Response time measurement conditions: recorded with nominal power at 25 C ambient temperature. 4. Page-to-page response times: derived from all possible page-to-page accesses on a sequentially precondi- tioned drive. 5. Average response time: derived from at least 5000 access measurements between programmable pages on a randomly preconditioned drive to ensure a true statistical random average. CCMTD-1725822587-3891 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 s600dc_series_2_5_sas_ssd.pdf - Rev. H 9/17 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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