Product Information

NAND512W3A2SZA6F

NAND512W3A2SZA6F electronic component of Micron

Datasheet
SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 63-Pin VFBGA T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13: USD 5.2364 ea
Line Total: USD 68.07

0 - Global Stock
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 13
Multiples : 1
13 : USD 5.2364
25 : USD 4.9918
100 : USD 4.4158
250 : USD 4.234
500 : USD 3.8772
1000 : USD 3.5751

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
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Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
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Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Hardware program/erase locked during Features power transitions Density Electronic signature 512 Mbit: 4096 blocks Manufacturer ID: NAND Flash interface x8 device: 20h x16 device: 0020h x8 or x16 bus width Device ID: Multiplexed address/data NAND512W3A2S: 76h Memory configuration NAND512W4A2S: 0056h Page size: NAND512R3A2S: 36h x8 device: (512 + 16 spare) Bytes NAND512R4A2S: 0046h x16 device: (256 + 8 spare) Words Package Block size: RoHS compliant x8 device: (16K + 512 spare) Bytes TSOP48 12 x 20 mm x16 device: (8K + 256 spare) Words VFBGA63 9 x 11 mm Supply voltage: 1.8 V, 3 V Read/write performance Random access: 12 s (3 V)/15 s(1.8 V) Table 1. Device summary (max) Root part number list - see Table 25 for details Sequential access: 30 ns (3 V)/50 ns NAND512W3A2S (1.8 V)(min) Page program time: 200 s (typ) NAND512W4A2S Block erase time: 2 ms (typ) NAND512R3A2S Programming performance (typ): NAND512R4A2S x8 device: 2.3 MByte/s x16 device: 2.4 MByte/s Additional features Copy back program mode Error correction code models Bad blocks management and wear leveling algorithms Hardware simulation models Quality and reliability 100,000 program/erase cycles (with ECC) 10 years data retention Operating temperature: 40 to 85 C Security OTP area Serial number (unique ID) October 2012 210403 - Rev 4 1/51 www.numonyx.com 1Contents Numonyx SLC SP 70 nm Contents 1 Description . 6 2 Memory array organization 11 3 Signal descriptions . 13 4 Bus operations 15 4.1 Command input 15 4.2 Address input 15 4.3 Data input . 15 4.4 Data output 15 4.5 Write protect . 16 4.6 Standby 16 5 Command set 18 6 Device operations 19 6.1 Pointer operations 19 6.2 Read memory array . 20 6.2.1 Random read . 20 6.2.2 Page read . 21 6.2.3 Sequential row read 21 6.3 Page program 23 6.4 Copy back program . 24 6.5 Block erase 25 6.6 Reset 25 6.7 Read status register . 26 6.7.1 Write protection bit (SR7) . 26 6.7.2 P/E/R controller bit (SR6) . 26 6.7.3 Error bit (SR0) 26 6.7.4 SR5, SR4, SR3, SR2 and SR1 are reserved . 26 6.8 Read electronic signature . 27 2/51 210403 - Rev 4

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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