Product Information

MEM2302XG-N

Name: MEM2302XG-N
Brand: Micro One
SKU: MEM2302XGN_MicroOne
Availability: OutOfStock
Rating: 5 (11 reviews)

MEM2302XG-N electronic component of Micro One

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See Product Specifications
Datasheet

MOSFET P Channel 20V 2.8A 1.1V @ 250uA 130mO @ 2.8A,4.5V SOT23 RoHS

Manufacturer: Micro One

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0547 ea
Line Total: USD 0.55

0 - Global Stock

MOQ: 10 Multiples: 10
Pack Size: 10

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 10 May to Wed. 15 May MOQ : 10 Multiples : 10 MEM2302XG-N Micro One	10 : USD 0.0547 100 : USD 0.0452 300 : USD 0.0405 3000 : USD 0.0359 6000 : USD 0.0331 9000 : USD 0.0316

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Additional Infomation About Product

The MEM2302XG-N is a P Channel MOSFET manufactured by Micro One with a maximum voltage rating of 20V and a continuous drain current of 2.8A. It has a drain-source voltage of 1.1V, a gate-source charge of 250µA, and a drain-source resistance of 130mO at 2.8A. The device is packaged in a RoHS compliant SOT23 package and has a gate threshold voltage rating of 4.5V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Micro One may also be referenced as

MICRONE(Nanjing Micro One Elec)
Nanjing Micro One Elec

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Manufacturer Micro One Micro One
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT23 SOT23
Brand Category Micro One Micro One
Fet Type PChannel PChannel
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 2.8 A 2.8 A
Vgsth Max @ Id 1.1V @ 250uA 1.1V @ 250uA
Rds On Max @ Id Vgs 130mO @ 2.8A,4.5V 130mO @ 2.8A,4.5V
Power Dissipation-Max Ta 25°C 1.4 W 1.4 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 2.8 A 2.8 A
Drain Source On Resistance Rdson@Vgs Id 130 mOhms @4.5V , 2.8A 130 mOhms @4.5V , 2.8A
Power Dissipation Pd 1.4 W 1.4 W
Gate Threshold Voltage Vgsth@Id 1.1 V @250uA 1.1 V @250uA
Type P Channel P Channel