Product Information

MEM2307M3G

MEM2307M3G electronic component of Micro One

Datasheet
MOSFET P Channel 30V 4.1A 2V @ 250uA 88mO @ 4.1A,10V SOT23-3 RoHS

Manufacturer: Micro One
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1012 ea
Line Total: USD 0.51

38 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
38 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 5
Multiples : 5

Stock Image

MEM2307M3G
Micro One

5 : USD 0.093
50 : USD 0.0753
150 : USD 0.0665
500 : USD 0.0599
3000 : USD 0.0546
6000 : USD 0.052

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The MEM2307M3G is a MOSFET-based P Channel 30V 4.1A 2V @ 250uA 88mO @ 4.1A, 10V SOT23-3 RoHS manufactured by Micro One. It is a three-terminal, extreme low-Voltage field effect transistor that can be used for switching in low voltage applications such as battery-driven circuits and consumer electronic equipment. The device consists of an insulated gate, source and drain that are connected together in SOT-23 package through leads that can be soldered onto the circuit for easy assembly. It has an impressive power dissipation capability up to 4.1A at 10V and can withstand maximum voltage limits up to 30V. Moreover, it comes with impressive performance characteristics such as an extremely low gate charge of 250uA and an 88mOhm drain-source ON resistance at 4.1A, 10V. This device is RoHS compliant and is digitally enhanced for use in automotive and consumer electronics industry.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MICRONE(Nanjing Micro One Elec)
Nanjing Micro One Elec

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