MPQ18021A 100V, 2.5A, High-Frequency Half-Bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MPQ18021A is a high-frequency, 100V, half- Drives N-Channel MOSFET Half Bridge bridge, N-channel power MOSFET driver. Its low- 115V V Voltage Range BST side and high-side driver channels are On-Chip Bootstrap Diode independently controlled and matched with a time Typical 16ns Propagation Delay Time delay of less than 5ns. Under-voltage lockout on Less Than 5ns Gate Drive Matching both high-side and low-side supplies force their Drives 1nf Load with 12ns/9ns Rise/Fall outputs low in case of insufficient supply. The Times with 12V VDD integrated bootstrap diode reduces external TTL Compatible Input component count. Less Than 150A Quiescent Current UVLO for Both High-Side and Low-Side In SOIC8 Package APPLICATIONS Telecom Half-Bridge Power Supplies Avionics DC-DC Converters Two-Switch Forward Converters Active Clamp Forward Converters All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Products, Quality Assurance page. MPS and The Future of Analog IC Technology are registered trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION +12V 100V SECONDARY VDD SIDE CIRCUIT BST/HB INH/HI DRIVE DRVH/HO HI PWM SW/HS CONTROLLER INL/LI DRVL/LO DRIVE LO MPQ18021A VSS ISOLATION AND FEEDBACK MPQ18021A Rev. 1.0 www.MonolithicPower.com 1 12/10/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2013 MPS. All Rights Reserved. CONTROLMPQ18021A100V, 2.5A, HIGH-FREQUENCY HALF-BRIDGE GATE DRIVER ORDERING INFORMATION Part Number Package Top Marking SOIC8 MPQ18021HS-A* MP18021A * For Tape & Reel, add suffix Z (e.g. MPQ18021HSAZ) For RoHS compliant packaging, add suffix LF (e.g. MPQ18021HSALFZ) PACKAGE REFERENCE TOP VIEW VDD 1 8 DRVL/LO BST/HB 2 7 VSS DRVH/HO 3 6 INL/LI SW/HS 4 5 INH/HI SOIC8 (1) (4) ABSOLUTE MAXIMUM RATINGS Thermal Resistance JA JC Supply Voltage (VDD).................. -0.3V to +20V SOIC8 .................................... 90...... 45... C/W SW Voltage (V ) ...................... -5.0V to +105V SW Notes: BST Voltage (V ) .................... -0.3V to +120V BST 1) Exceeding these ratings may damage the device. BST to SW................................... -0.3V to +18V 2) The maximum allowable power dissipation is a function of the maximum junction temperature T(MAX), the junction-to- J DRVH to SW............. -0.3V to (BST-SW) + 0.3V ambient thermal resistance , and the ambient temperature JA DRVL to VSS.................. -0.3V to (VDD + 0.3V) T . The maximum allowable continuous power dissipation at A All Other Pins...................-0.3V to (VDD + 0.3V) any ambient temperature is calculated by P (MAX)=(T (MAX)- D J (2) T )/ . Exceeding the maximum allowable power dissipation A JA Continuous Power Dissipation (T =25C) A will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry SOIC8........................................................1.4W protects the device from permanent damage. Junction Temperature..............................150C 3) The device is not guaranteed to function outside of its Lead Temperature ...................................260C operating conditions. 4) Measured on JESD51-7, 4-layer PCB. Storage Temperature...............-65C to +150C (3) Recommended Operating Conditions Supply Voltage (V )....................... 9.0V to 18V DD SW Voltage (V ) ...................... -1.0V to +100V SW SW slew rate ........................................<50V/ns Operating Junction Temp. (T ). -40C to +125C J MPQ18021A Rev. 1.0 www.MonolithicPower.com 2 12/10/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2013 MPS. All Rights Reserved.