LXES15AAA1-017 Murata

Silicon ESD protection device LXESxxT series Document No. LX1-1463 Rev1.0 p1/17 1. Application This specification shall be applied to the ESD Protection Device. LXES03TBB1-141 LXES03TAA1-142 LXES1UTAA1-157 2. Part Number Configuration LXES 1U T AA 1 157 Product ID LXES = ESD Protection device Dimension Code Unit : mm Code Dimension package (serial number) 03 0.6 x 0.3 CSP (141/142) 1U 1.0 x 0.6 DFN (157) Type(T:Silicon ESD) Control Code Number of channel Serial Number RoHS Compliant Halogen free T/R only.p2/17 3. CHARACTERISTICS 3-1 Ratings Operating Storage Parameter Package Temperature Temperature Symbol T T OP STO 0 0 Unit C C LXES03TBB1-141 -40 to +85 -40 to +125 CSP LXES03TAA1-142 -40 to +85 -40 to +125 LXES1UTAA1-157 DFN1006 -40 to +85 -40 to +125 3-2 Electrical Characteristics (T=25) Reverse ESD per IEC Channel Leakage Break down ESD per IEC Parameter Working 61000-4-2 Capacitance Current voltage 61000-4-2(air) Voltage (contact) Symbol V I V V V C RWM leak br esd esd Unit V nA V kV kV pF VPin1=5V, Ibr=1mA, VPin1,2=0V, f = 1MHz, Condition Ta=25 Ta=25 VP =0V P to P Between Channel pins in2 in1 in2 LXES03TBB1-141 +/-5.0 50 (max) 7 (min) +/- 25 +/- 8 0.45 LXES03TAA1-142 +/-5.0 50 (max) 7(min) +/- 15 +/- 8 5 Reverse ESD per IEC Channel Leakage Break down ESD per IEC Parameter Working 61000-4-2 Capacitance Current voltage 61000-4-2(air) Voltage (contact) Symbol V I V V V C RWM leak br esd esd Unit V uA V kV kV pF VP =5V, I =1mA, VP =0V, f = 1MHz, in1 br in1,2 Condition Ta=25 Ta=25 VP =0V P to P Between Channel pins in2 in1 in2 LXES1UTAA1-157 +/-6.0 1.0 (max) 7 (min) +/- 15 +/- 8 0.5 MURATA MFG. CO., LTD.