X-On Electronics has gained recognition as a prominent supplier of NP2301AMR-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NP2301AMR-G MOSFETs are a product manufactured by NATLINEAR. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NP2301AMR-G NATLINEAR

Name: NP2301AMR-G
Brand: NATLINEAR
SKU: NP2301AMRG_NATLINEAR
Availability: InStock
Rating: 5 (11 reviews)

NP2301AMR-G electronic component of NATLINEAR

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See Product Specifications

Part No.	NP2301AMR-G
Manufacturer:	NATLINEAR
Category:	MOSFETs
Description:	MOSFET P Trench 20V 2.8A 1.2V @ 250uA 80 mÎ© @ 2.8A,4.5V SOT-23-3L RoHS
Datasheet:	NP2301AMR-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0512 ea
Line Total: USD 1.02

Availability - 2851
Ship by Thu. 03 Jul to Tue. 08 Jul

MOQ: 20 Multiples: 20
Pack Size: 20

NP2301AMR-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2851

Ship by Thu. 03 Jul to Tue. 08 Jul

MOQ : 20
Multiples : 20

20 : USD 0.0512
200 : USD 0.04
600 : USD 0.0253
3000 : USD 0.0204
9000 : USD 0.0182
21000 : USD 0.017
39000 : USD 0.0168

Specifications

Manufacturer

NATLINEAR NATLINEAR

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 - 3L SOT - 23 - 3L

Brand Category

NATLINEAR NATLINEAR

Fet Type

p trench p trench

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

2.8 A 2.8 A

Vgsth Max @ Id

1.2 V @ 250ua 1.2 V @ 250ua

Rds On Max @ Id Vgs

80 m @ 2.8a,4.5v 80 m @ 2.8a,4.5v

Power Dissipation-Max Ta

1.2 W 1.2 W

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

2.8 A 2.8 A

Drain Source On Resistance Rdson@Vgs Id

80 mOhms @4.5V , 2.8A 80 mOhms @4.5V , 2.8A

Power Dissipation Pd

1.2 W 1.2 W

Gate Threshold Voltage Vgsth@Id

1.2 V @250uA 1.2 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

NP2301AMR-G Alternative Parts

We are delighted to provide the NP2301AMR-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NP2301AMR-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The NP2301AMR-G is an N-channel 20V field effect transistor (FET) manufactured by NATLINEAR. It is packaged in a lead-free, three-lead SOT-23-3L surface mount package, making it suitable for high-density applications. It features Trench MOSFET technology, which allows for higher current handling capabilities and lower on-resistance compared to other FETs. The P-channel FET has a maximum drain current rating of 2.8A and a drain-source voltage rating of 20V. Additionally, the gate threshold voltage is rated at 1.2V @ 250uA and the on-resistance (Rdss) is rated at 80mOhm @ 2.8A and 4.5V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2851 Ship by Thu. 03 Jul to Tue. 08 Jul MOQ : 20 Multiples : 20	20 : USD 0.0512 200 : USD 0.04 600 : USD 0.0253 3000 : USD 0.0204 9000 : USD 0.0182 21000 : USD 0.017 39000 : USD 0.0168

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