1PS70SB15,115 Nexperia

1PS70SB15 Dual Schottky barrier diode 17 December 2012 Product data sheet 1. General description Dual Planar Schottky barrier diode in common cathode configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low capacitance AEC-Q101 qualified 3. Applications Ultra high-speed switching Line termination Voltage clamping Line termination 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I forward current - - 200 mA F V reverse voltage - - 30 V R Per diode V forward voltage I = 10 mA T = 25 C - - 400 mV F F amb Scan or click this QR code to view the latest information for this productNXP Semiconductors 1PS70SB15 Dual Schottky barrier diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol K1, K2 1 A1 anode (diode 1) 3 2 A2 anode (diode 2) A1 A2 3 K1, K2 common cathode aaa-004975 1 2 SC-70 (SOT323) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 1PS70SB15 SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 1PS70SB15 7%5 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V reverse voltage - 30 V R I forward current - 200 mA F I repetitive peak forward current t 1 s 0.5 - 300 mA FRM p I non-repetitive peak forward t < 10 ms T = 25 C - 600 mA FSM p j(init) current P total power dissipation T < 25 C - 200 mW tot amb T junction temperature - 150 C j T ambient temperature -55 150 C amb 1PS70SB15 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 17 December 2012 2 / 9