2N7002CK

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product prole 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features n Logic-level compatible n Very fast switching n Trench MOSFET technology n ESD protection up to 3 kV 1.3 Applications n Relay driver n High-speed line driver n Low-side loadswitch n Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 60 V DS I drain current - - 300 mA D I peak drain current single pulse - - 1.2 A DM t 10 s p R drain-source on-state V =10V - 1.1 1.6 DSon GS resistance I = 500 mA D2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplied outline Graphic symbol 1 G gate D 3 2 S source 3 D drain G 12 S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002CK TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002CK LP* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 2N7002CK 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 11 September 2009 2 of 13