The 2N7002E,215 is an N-channel Silicon Material MosFet transistor that is manufactured by NXP. It has a total gate charge of 5.2nC and a drain-source on-state resistance of 0.23 Ohm. It has a max drain source voltage of 30V, a max continuous drain current of 215mA, and a gate-source voltage of +/- 20V. This device is designed for low-charge mobility and high ESD tolerance and is suitable for applications such as battery management, smart energy, power and battery management, and industrial automation.