BAS85,115 Nexperia

BAS85 Schottky barrier diode Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package with tin-plated metal discs at each end. It is suitable for automatic placement and as such it can withstand immersion soldering. 1.2 Features and benefits Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package 1.3 Applications Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current - - 200 mA F V reverse voltage - - 30 V R V forward voltage I = 100 mA - - 800 mV F FBAS85 Nexperia Schottky barrier diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 12 2 anode ka sym001 1 The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS85 - hermetically sealed glass surface-mounted package SOD80C 2 connectors 4. Marking Table 4. Marking codes Type number Marking code BAS85 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current - 200 mA F 1 I average forward current -200 mA F(AV) I repetitive peak forward t 1s 0.5 - 300 mA FRM p current I non-repetitive peak t =10ms - 5 A FSM p forward current T junction temperature - 125 C j T ambient temperature 65 +125 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS85 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2010. All rights reserved. Product data sheet Rev. 6 10 September 2010 2 of 10