BAT54GWJ Nexperia

BAT54GW 30 V, 200 mA Schottky barrier diodes 24 November 2016 Product data sheet 1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage: V 400 mV F Low leakage current: I 2 A R Reverse voltage V 30 V R Low capacitance Small SMD plastic package AEC-Q101 qualified 3. Applications Ultra high-speed switching Line termination 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T = 25 C - - 200 mA F j V forward voltage I = 10 mA t 300 s 0.02 - - 400 mV F F p T = 25 C j 1 I reverse current V = 25 V pulsed T = 25 C - - 2 A R R j V reverse voltage T = 25 C - - 30 V R j 1 Very short test pulse to prevent junction self-heating.Nexperia BAT54GW 30 V, 200 mA Schottky barrier diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 1 K cathode 1 2 1 2 2 A anode sym001 SOD123 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAT54GW SOD123 Plastic surface-mounted package 2 leads SOD123 7. Marking Table 4. Marking codes Type number Marking code BAT54GW G9 BAT54GW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 November 2016 2 / 12