BC846DS Nexperia

BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 17 July 2009 Product data sheet 1. Product prole 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualied 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 65 V CEO I collector current - - 100 mA C h DC current gain V =5V I = 2 mA 200 300 450 FE CE CBC846DS NXP Semiconductors 65 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 132 5 base TR2 1 2 3 6 collector TR1 sym020 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BC846DS SC-74 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code BC846DS ZK 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 80 V CBO V collector-emitter voltage open base - 65 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 200 mA BM t 1ms p 1 P total power dissipation T 25 C - 250 mW tot amb Per device 1 P total power dissipation T 25 C - 380 mW tot amb BC846DS 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 17 July 2009 2 of 12