X-On Electronics has gained recognition as a prominent supplier of BC846S bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. BC846S bipolar transistors - bjt are a product manufactured by Nexperia. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

BC846S

BC846S electronic component of Nexperia
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See Product Specifications
Part No.BC846S
Manufacturer: Nexperia
Category:Bipolar Transistors - BJT
Description: TRANSISTOR, NPN, 65V, 100MA, SOT363
Datasheet: BC846S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.0691 ea
Line Total: USD 34.55

Availability - 1956
Ships to you between
Fri. 31 May to Thu. 06 Jun
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 500
Multiples : 1
500 : USD 0.0691
1500 : USD 0.0656

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Collector Emitter Voltage V Br Ceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC846S NPN general purpose double transistor Product data sheet 1999 Sep 01 Supersedes data of 1999 May 28NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S FEATURES Two transistors in one package Reduces number of components and board space 6 5 4 handbook, halfpage 6 5 4 No mutual interference between the transistors. TR2 APPLICATIONS TR1 General purpose switching and small signal 132 amplification. 132 Top view MAM340 DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package. Fig.1 Simplified outline (SC-88) and symbol. PINNING PIN DESCRIPTION MARKING 1, 4 emitter TR1 TR2 TYPE NUMBER MARKING CODE 2, 5 base TR1 TR2 6, 3 collector TR1 TR2 BC846S 4Ft LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V collector-base voltage open emitter 80 V CBO V collector-emitter voltage open base 65 V CEO V emitter-base voltage open collector 6 V EBO I collector current (DC) 100 mA C P total power dissipation T 25 C 200 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Per device P total power dissipation T 25 C note 1 300 mW tot amb Note 1. Refer to SC-88 (SOT363) standard mounting conditions. 1999 Sep 01 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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