Product Information

BSH205G2

BSH205G2 electronic component of Nexperia

Datasheet
MOSFET, P-CH, -20V, -2A, TO236AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.209 ea
Line Total: USD 20.9

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 100
Multiples : 1

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BSH205G2
Nexperia

100 : USD 0.2072
500 : USD 0.1565
1500 : USD 0.1539

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 890 mW AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -2.3 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2 A T = 25 C - 120 170 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product SOT23NXP Semiconductors BSH205G2 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source G 3 D drain S 017aaa257 1 2 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSH205G2 TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 BSH205G2 %KB 1 % = placeholder for manufacturing site code BSH205G2 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 29 April 2015 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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