BSP51,115 Nexperia

BSP52 NPN Darlington transistor 23 February 2018 Product data sheet 1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62 2. Features and benefits High current of 1 A Low voltage of 80 V Integrated diode and resistor AEC-Q101 qualified 3. Applications Industrial high gain amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 90 V CBO V collector-emitter base short-circuited to emitter - - 80 V CES voltage I collector current - - 1 A C I peak collector current - - 2 A CM h DC current gain V = 10 V I = 150 mA 1 1000 - - FE CE C 1 Pulse test: t 300 s 0.02. pNexperia BSP52 NPN Darlington transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector B 3 E emitter 1 2 3 4 C collector SC-73 (SOT223) E aaa-027580 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSP52 SC-73 plastic, surface-mounted package with increased heatsink 4 SOT223 leads 4.6 mm pitch 6.5 mm x 3.5 mm x 1.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BSP52 BSP52 BSP52 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 23 February 2018 2 / 10