Product Information

BSP51,115

BSP51,115 electronic component of Nexperia

Datasheet
Bipolar (BJT) Transistor NPN - Darlington 60 V 1 A 200MHz 1.25 W Surface Mount SOT-223
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6026 ea
Line Total: USD 0.6

1086 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
950 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BSP51,115
Nexperia

1 : USD 0.5099
10 : USD 0.417
30 : USD 0.3774
100 : USD 0.328
500 : USD 0.3044
1000 : USD 0.2905

1086 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BSP51,115
Nexperia

1 : USD 0.6026
10 : USD 0.5083
100 : USD 0.3553
500 : USD 0.2852
1000 : USD 0.2346
2000 : USD 0.2058
10000 : USD 0.1978
25000 : USD 0.1932
50000 : USD 0.1886

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BSP52 NPN Darlington transistor 23 February 2018 Product data sheet 1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62 2. Features and benefits High current of 1 A Low voltage of 80 V Integrated diode and resistor AEC-Q101 qualified 3. Applications Industrial high gain amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 90 V CBO V collector-emitter base short-circuited to emitter - - 80 V CES voltage I collector current - - 1 A C I peak collector current - - 2 A CM h DC current gain V = 10 V I = 150 mA 1 1000 - - FE CE C 1 Pulse test: t 300 s 0.02. pNexperia BSP52 NPN Darlington transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector B 3 E emitter 1 2 3 4 C collector SC-73 (SOT223) E aaa-027580 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSP52 SC-73 plastic, surface-mounted package with increased heatsink 4 SOT223 leads 4.6 mm pitch 6.5 mm x 3.5 mm x 1.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BSP52 BSP52 BSP52 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 23 February 2018 2 / 10

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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