BSS192,115 Nexperia

BSS192,115 electronic component of Nexperia
BSS192,115 Nexperia
BSS192,115 MOSFETs
BSS192,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS192,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS192,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS192,115
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 240 V 200mA (Ta) 560mW (Ta), 12.5W (Tc) Surface Mount SOT-89
Datasheet: BSS192,115 Datasheet (PDF)
Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability : 9151
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 0.6762
10$ 0.505
100$ 0.3335
500$ 0.2431
1000$ 0.2024
2000$ 0.1738
5000$ 0.1727
10000$ 0.1727
25000$ 0.1727

Availability 9151
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6762
10$ 0.505
100$ 0.3335
500$ 0.2431
1000$ 0.2024
2000$ 0.1738
5000$ 0.1727
10000$ 0.1727
25000$ 0.1727


Availability 9700
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 2000
Multiples : 1000
QtyUnit Price
2000$ 0.242
2000$ 0.209
3000$ 0.2069


Availability 988
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6494
10$ 0.5084
30$ 0.4478
100$ 0.2797
500$ 0.2295
1000$ 0.2164


Availability 2079
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 1190
Multiples : 1
QtyUnit Price
1190$ 0.2187


Availability 81480
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 5000
Multiples : 1000
QtyUnit Price
5000$ 0.1761

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS192,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS192,115 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D- MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic (TTL) devices Very fast switching No secondary breakdown 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -240 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -200 mA D GS amb Static characteristics R drain-source on-state V = -10 V I = -200 mA T = 25 C - 10 12 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product SOT89

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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