BST52.115 Nexperia

BST52.115 electronic component of Nexperia
BST52.115 Nexperia
BST52.115 Darlington Transistors
BST52.115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BST52.115 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BST52.115 Darlington Transistors are a product manufactured by Nexperia. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. BST52.115
Manufacturer: Nexperia
Category: Darlington Transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SOT89
Datasheet: BST52.115 Datasheet (PDF)
Price (USD)
1: USD 0.6066 ea
Line Total: USD 0.61 
Availability : 0
  
QtyUnit Price
1$ 0.6066
10$ 0.4189
50$ 0.377
62$ 0.3221
168$ 0.3048

Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6066
10$ 0.4189
50$ 0.377
62$ 0.3221
168$ 0.3048

   
Manufacturer
Product Category
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Mounting
Case
Polarisation
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Type Of Transistor
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Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BST52.115 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BST52.115 and other electronic components in the Darlington Transistors category and beyond.

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BST52.115 is a N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Nexperia. It is a 200 V device, with a 0.13 ohm on-state resistance (RDSon). The maximum continuous Drain-Source voltage is -200 V and the maximum Pulse Drain-Source Voltage is -400 V. It has a 6.5 A maximum Continuous Drain Current and a 20 A maximum Pulse Drain Current. The maximum allowable junction temperature is 150 degrees Celsius and it is packaged in the TO-220AB package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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