BUK9612-55B,118 Nexperia

BUK9612-55B,118 electronic component of Nexperia
BUK9612-55B,118 Nexperia
BUK9612-55B,118 MOSFETs
BUK9612-55B,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9612-55B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9612-55B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9612-55B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 55 V 75A (Tc) 157W (Tc) Surface Mount D2PAK
Datasheet: BUK9612-55B,118 Datasheet (PDF)
Price (USD)
1: USD 2.85 ea
Line Total: USD 2.85 
Availability : 0
  
QtyUnit Price
1$ 2.85
10$ 1.752
100$ 1.155
500$ 0.9856
800$ 0.8811
2400$ 0.8481
4800$ 0.847
24800$ 0.8393

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.3868
10$ 2.0563
100$ 1.6525


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.3868
10$ 2.0563
100$ 1.6525


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.4143
1600$ 1.125
2400$ 1.0474
5600$ 1.0086


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 0.5478
1600$ 0.5296


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.0229
10$ 2.6222
30$ 2.3694
100$ 2.1127
500$ 1.9982
800$ 1.947


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.85
10$ 1.752
100$ 1.155
500$ 0.9856
800$ 0.8811
2400$ 0.8481
4800$ 0.847
24800$ 0.8393


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 154
Multiples : 154
QtyUnit Price
154$ 0.9107


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1575
5$ 1.9404
11$ 1.4546
30$ 1.3759


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 4800
Multiples : 4800
QtyUnit Price
4800$ 0.6496


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 0.9803

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9612-55B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9612-55B,118 and other electronic components in the MOSFETs category and beyond.

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BUK9612-55B N-channel TrenchMOS logic level FET Rev. 02 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --157W tot mb dissipation Static characteristics R drain-source V =10V I =25A -9 10 m DSon GS D on-state T =25C j resistance V =5V I =25A -10.212 m GS D T =25C j see Figure 11 see Figure 12BUK9612-55B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --172mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -12 - nC GD GS D V =44 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9612-55B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9612-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 4 June 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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