BUK98150-55CUF Nexperia

BUK98150-55 N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Electrostatically robust due to integrated protection diodes Low conduction losses due to low on-state resistance 3. Applications Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 55 V DS j j I drain current T = 25 C - - 5.5 A D sp P total power dissipation T = 25 C Fig. 4 - - 8.3 W tot sp Static characteristics R drain-source on-state V = 5 V I = 5 A T = 25 C - 120 150 m DSon GS D j resistance Avalanche ruggedness E non-repetitive drain- I = 1.9 A V 25 V R = 50 - - 15 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors BUK98150-55 N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 4 D 2 D drain G 3 S source 1 2 3 4 D drain SC-73 (SOT223) S sym116 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK98150-55 SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK98150-55/CU SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code BUK98150-55 BUK98150-55/CU 915055 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -10 10 V GS P total power dissipation T = 25 C Fig. 4 - 8.3 W tot sp I drain current T = 25 C - 5.5 A D sp T = 100 C - 3.5 A sp BUK98150-55 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 19 March 2014 2 / 11