BUK9640-100A,118 Nexperia

BUK9640-100A,118 electronic component of Nexperia
BUK9640-100A,118 Nexperia
BUK9640-100A,118 MOSFETs
BUK9640-100A,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9640-100A,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9640-100A,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9640-100A,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET TAPE13 PWR-MOS
Datasheet: BUK9640-100A,118 Datasheet (PDF)
Price (USD)
1: USD 1.4875 ea
Line Total: USD 1.49 
Availability : 1350
  
Ship by Mon. 08 Sep to Wed. 10 Sep
QtyUnit Price
1$ 1.4875
10$ 1.1724
100$ 0.8184
500$ 0.8184
800$ 0.7513
2400$ 0.7381

Availability 1350
Ship by Mon. 08 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4875
10$ 1.1724
100$ 0.8184
500$ 0.8184
800$ 0.7513
2400$ 0.7381


Availability 294
Ship by Wed. 10 Sep to Tue. 16 Sep
MOQ : 279
Multiples : 1
QtyUnit Price
279$ 0.9322


Availability 57
Ship by Wed. 17 Sep to Mon. 22 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.9996
10$ 2.5233
30$ 2.0025
100$ 1.7284
500$ 1.6035
800$ 1.5494


Availability 672
Ship by Mon. 08 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.862
10$ 1.512
14$ 1.372
39$ 1.288

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9640-100A,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9640-100A,118 and other electronic components in the MOSFETs category and beyond.

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BUK9640-100A N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 - - 39 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 158 W tot mb Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - - 43 m DSon GS D j resistance V = 10 V I = 25 A T = 25 C - 29 39 m GS D j V = 5 V I = 25 A T = 25 C - 34 40 m GS D j Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 80 V - 20 - nC GD GS D DS T = 25 C Fig. 13 jNexperia BUK9640-100A N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- I = 39 A V 100 V R = 50 - - 182 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make a connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9640-100A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK9640-100A BUK9640-100A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -15 15 V GS BUK9640-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 13 March 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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