BUK9K13-60EX Nexperia

BUK9K13-60EX electronic component of Nexperia
BUK9K13-60EX Nexperia
BUK9K13-60EX MOSFETs
BUK9K13-60EX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9K13-60EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9K13-60EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9K13-60EX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 60V N-CHANNEL LOGIC LEVEL DUA
Datasheet: BUK9K13-60EX Datasheet (PDF)
Price (USD)
1: USD 1.6 ea
Line Total: USD 1.6 
Availability : 0
  
QtyUnit Price
1$ 1.6
10$ 1.1904
100$ 0.847
500$ 0.7403
1000$ 0.5918
1500$ 0.5885
3000$ 0.5742
9000$ 0.5665
24000$ 0.5654

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.6185


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.3814
10$ 1.5889
100$ 1.122
500$ 0.882
1000$ 0.8662


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.4444
10$ 2.525
30$ 2.2387
100$ 2.203


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6
10$ 1.1904
100$ 0.847
500$ 0.7403
1000$ 0.5918
1500$ 0.5885
3000$ 0.5742
9000$ 0.5665
24000$ 0.5654


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8319
5$ 1.6555
13$ 1.2321
35$ 1.1642

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Rohs Mouser
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9K13-60EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9K13-60EX and other electronic components in the MOSFETs category and beyond.

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BUK9K13-60E Dual N-channel 60 V, 12.5 m logic level MOSFET 2 September 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 5 V T = 25 C Fig. 2 1 - - 40 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 64 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 10 A T = 25 C Fig. 11 - 10 12.5 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 10 A V = 48 V V = 5 V - 7.9 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 j 1 Continuous current is limited by packageNexperia BUK9K13-60E Dual N-channel 60 V, 12.5 m logic level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K13-60E LFPAK56D Plastic single ended surface mounted package SOT1205 (LFPAK56D) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K13-60E 91360E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 64 W tot mb I drain current T = 25 C V = 5 V Fig. 2 3 - 40 A D mb GS T = 100 C V = 5 V Fig. 2 - 33 A mb GS BUK9K13-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 September 2015 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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