Product Information

BUK9K29-100E,115

BUK9K29-100E,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET Dual N-channel 100 V 29 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.794 ea
Line Total: USD 1.79

7991 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7991 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.794
10 : USD 1.449
100 : USD 1.242
250 : USD 1.2305
500 : USD 1.0821
1500 : USD 0.8648
3000 : USD 0.8648
9000 : USD 0.8648

1052 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 76
Multiples : 1
76 : USD 1.4667
100 : USD 1.401
250 : USD 1.3448
500 : USD 1.2964
1000 : USD 1.2541

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V > 0.5 V 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 30 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 68 W tot mb T junction temperature -55 - 175 C j Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 12 - 25.1 29 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q total gate charge I = 10 A V = 80 V V = 10 V - 54 - nC G(tot) D DS GS T = 25 C Fig. 14 Fig. 15 j Q gate-drain charge - 10.9 - nC GDNexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness FET1 and FET2 E non-repetitive drain- I = 30 A V 100 V V = 5 V 1 2 - - 83 mJ DS(AL)S D sup GS source avalanche T = 25 C Fig. 3 j(init) energy 1 Refer to application note AN10273 for further information 2 Single-pulse avalanche rating limited by maximum junction temperature of 175 C 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 6 D2 drain2 mbk725 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K29-100E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K29-100E 9291E BUK9K29-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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