Product Information

BUK9K6R2-40E

BUK9K6R2-40E electronic component of Nexperia

Datasheet
MOSFET, N-CH, 40V, 40A, LFPAK56D
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.285 ea
Line Total: USD 2.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BUK9K6R2-40E
Nexperia

1 : USD 2.3863
10 : USD 1.9076
100 : USD 1.4108
500 : USD 1.2285
1000 : USD 0.9896

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
LoadingGif

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Additional Infomation About Product

BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V > 0.5 V 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 40 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 68 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 20 A T = 25 C Fig. 12 - 5.27 6.2 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 10 A V = 32 V V = 10 V - 5.8 - nC GD D DS GS T = 25 C Fig. 14 Fig. 15 j Scan or click this QR code to view the latest information for this product LFPAK56DNXP Semiconductors BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K6R2-40E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K6R2-40E 96E240 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k T 25 C T 175 C - 40 V DGR GS j j V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 40 A D mb GS T = 100 C V = 5 V Fig. 1 - 40 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 295 A DM mb p BUK9K6R2-40E All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 23 April 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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