X-On Electronics has gained recognition as a prominent supplier of BUK9M12-60EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9M12-60EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9M12-60EX Nexperia

BUK9M12-60EX electronic component of Nexperia
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Part No.BUK9M12-60EX
Manufacturer: Nexperia
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 54A 8-Pin LFPAK-33 T/R
Datasheet: BUK9M12-60EX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9522 ea
Line Total: USD 0.95 
Availability - 970
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9522
10 : USD 0.7061
100 : USD 0.5382
500 : USD 0.4439
1000 : USD 0.4243
1500 : USD 0.3921
3000 : USD 0.3588
9000 : USD 0.3588

   
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We are delighted to provide the BUK9M12-60EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9M12-60EX and other electronic components in the MOSFETs category and beyond.

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BUK9M12-60E N-channel 60 V, 12 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 54 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 79 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 10 12 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 48 V V = 5 V - 7.9 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9M12-60E N-channel 60 V, 12 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M12-60E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9M12-60E 91260E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 79 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 54 A D GS mb V = 5 V T = 100 C Fig. 2 - 38 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 216 A DM p mb BUK9M12-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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