BUK9Y14-40B,115 Nexperia

BUK9Y14-40B,115 electronic component of Nexperia
BUK9Y14-40B,115 Nexperia
BUK9Y14-40B,115 MOSFETs
BUK9Y14-40B,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9Y14-40B,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y14-40B,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9Y14-40B,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 40 V 56A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: BUK9Y14-40B,115 Datasheet (PDF)
Price (USD)
1: USD 0.76 ea
Line Total: USD 0.76 
Availability : 0
  
QtyUnit Price
1$ 0.76
10$ 0.5463
100$ 0.44
1500$ 0.3652
3000$ 0.3542
9000$ 0.3509
24000$ 0.3487

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9947
10$ 1.7219
100$ 1.3422
500$ 1.1087


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9947
10$ 1.7219
100$ 1.3422
500$ 1.1087


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.9078
3000$ 0.817
7500$ 0.7761
10500$ 0.7469


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5564
10$ 1.0074
100$ 0.6978
500$ 0.647


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.76
10$ 0.5463
100$ 0.44
1500$ 0.3652
3000$ 0.3542
9000$ 0.3509
24000$ 0.3487


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9Y14-40B,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y14-40B,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Q101 compliant on-state resistance Suitable for logic level gate drive Suitable for thermally demanding sources environments due to 175 C rating 1.3 Applications Air bag Automotive ABS systems Automotive transmission control Diesel injection systems Fuel pump and injection Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C --40 V DS j j I drain current V =5V T =25 C --56 A D GS mb see Figure 4 and 1 P total power dissipation T =25 C see Figure 2 --85 W tot mb Dynamic characteristics Q gate-drain charge V =5V I =10A -9 -nC GD GS D V = 32 V see Figure 14 DS Static characteristics R drain-source on-state V =5V I =20A - 1214m DSon GS D resistance T =25 C see Figure 12 and j 13 Avalanche ruggedness E non-repetitive I =56A V 40 V --89 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25 C unclamped j(init)Nexperia BUK9Y14-40B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1, 2, 3 S source mb D 4 G gate mb D mounting base G connected to drain mbb076 S 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y14-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-40V DS j j V gate-source voltage 15 15 V GS I drain current T =25 C V = 5 V see Figure 4 and 1 -56 A D mb GS T = 100 C V = 5 V see Figure 1 -40 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 226 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =56A V 40 V R =50 V =5V -89 mJ DS(AL)S D sup GS GS drain-source avalanche T =25 C unclamped j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy Source-drain diode I source current T =25 C-56A S mb I peak source current t 10 s pulsed T =25 C - 226 A SM p mb 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK9Y14-40B 3 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 2 June 2008 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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