Product Information

BUK9Y30-75B,115

BUK9Y30-75B,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET TRENCH 31V-99V G3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0396 ea
Line Total: USD 1.04

27355 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
27355 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.0787
10 : USD 0.8809
100 : USD 0.7015
500 : USD 0.6233
1000 : USD 0.5198
1500 : USD 0.4864
3000 : USD 0.4784

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Rohs Mouser
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 10 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Q101 compliant on-state resistance Suitable for logic level gate drive Suitable for thermally demanding sources environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C --75 V DS j j I drain current V =5V T =25 C --34 A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 --85 W tot mb Avalanche ruggedness E non-repetitive I =34 A V 75 V --78 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -9 -nC GD GS D V =60 V T =25 C DS j see Figure 14 Static characteristics R drain-source on-state V =5V I =15A -25 30 m DSon GS D resistance T =25 C see Figure 12 and j 13Nexperia BUK9Y30-75B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y30-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-75V DS j j V drain-gate voltage R =20k T 25 C T 175 C- 75 V DGR GS mb mb V gate-source voltage -15 15 V GS I drain current T =25 C V = 5 V see Figure 1 and 4 -34 A D mb GS T = 100 C V = 5 V see Figure 1 -24 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 137 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25 C-34A S mb I peak source current t 10 s pulsed T =25 C - 137 A SM p mb Avalanche ruggedness E non-repetitive I =34A V 75 V R =50 V =5V -78 mJ DS(AL)S D sup GS GS drain-source avalanche T =25 C unclamped j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK9Y30-75B 4 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 10 April 2008 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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