X-On Electronics has gained recognition as a prominent supplier of BUK9Y65-100E,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y65-100E,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y65-100E,115 Nexperia

BUK9Y65-100E,115 electronic component of Nexperia
BUK9Y65-100E,115 Nexperia
BUK9Y65-100E,115 MOSFETs
BUK9Y65-100E,115  Semiconductors

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See Product Specifications
Part No. BUK9Y65-100E,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel 100 V 65 mo FET
Datasheet: BUK9Y65-100E,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.2548 ea
Line Total: USD 382.2 
Availability - 2910
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
2910
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1500
Multiples : 1500
1500 : USD 0.2548
3000 : USD 0.2412
6000 : USD 0.2388
7500 : USD 0.2375
22500 : USD 0.2325

1265
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4963
10 : USD 0.4738
25 : USD 0.4548
100 : USD 0.3323
500 : USD 0.2871
1000 : USD 0.2838
1500 : USD 0.2563

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUK9Y65-100E,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y65-100E,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y65-100E N-channel 100 V, 65 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 19 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 64 W tot mb Static characteristics R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 11 - 51.4 65 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 5 A V = 80 V - 6 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y65-100E N-channel 100 V, 65 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y65-100E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y65-100E 96510E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 19 A D mb GS T = 100 C V = 5 V Fig. 1 - 13.4 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 76 A DM mb p P total power dissipation T = 25 C Fig. 2 - 64 W tot mb BUK9Y65-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 9 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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