X-On Electronics has gained recognition as a prominent supplier of BUK9Y72-80E,115 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK9Y72-80E,115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK9Y72-80E,115

BUK9Y72-80E,115 electronic component of Nexperia
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Part No.BUK9Y72-80E,115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-channel 80 V 78 mo FET
Datasheet: BUK9Y72-80E,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6222 ea
Line Total: USD 0.62

Availability - 10833
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7197 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8775
10 : USD 0.736
100 : USD 0.5138
500 : USD 0.4301
1000 : USD 0.3752
5000 : USD 0.316

947 - WHS 2


Ships to you between
Fri. 07 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9528
10 : USD 0.7916
30 : USD 0.7091
100 : USD 0.6285
500 : USD 0.5803
1500 : USD 0.5561

10833 - WHS 3


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6222
10 : USD 0.5394
100 : USD 0.3853
500 : USD 0.3277
1000 : USD 0.2944
1500 : USD 0.2588
3000 : USD 0.2323
9000 : USD 0.2323

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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BUK9Y72-80E N-channel 80 V, 78 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 15 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 45 W tot mb Static characteristics R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 11 - 65 78 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 5 A V = 64 V - 3.2 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y72-80E N-channel 80 V, 78 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y72-80E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y72-80E 97280E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage R = 20 k - 80 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 15 A D mb GS T = 100 C V = 5 V Fig. 1 - 10.7 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 61 A DM mb p P total power dissipation T = 25 C Fig. 2 - 45 W tot mb BUK9Y72-80E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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