Product Information

MMBZ18VAL

MMBZ18VAL electronic component of Nexperia

Datasheet
DIODE, DUAL TVS, 40W, 14.5V, SOT23

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4202 ea
Line Total: USD 2.1

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 100
Multiples : 1

Stock Image

MMBZ18VAL
Nexperia

100 : USD 0.1401
500 : USD 0.0958
1000 : USD 0.0568
5000 : USD 0.0488

     
Manufacturer
Product Category
Operating Voltage
Brand
Clamping Voltage Vc Max
Diode Case Style
No. Of Pins
Power Dissipation Pd
Product Range
Svhc
Breakdown Voltage Max
Breakdown Voltage Min
Breakdown Voltage Range
Diode Configuration
Peak Pulse Current Ippm
Reverse Stand-Off Voltage Vrwm
Tvs Polarity
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MMBZxAL series Low capacitance unidirectional double ESD protection diodes Rev. 02 10 December 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Type number Package Configuration NXP JEDEC MMBZ5V6AL SOT23 TO-236AB dual common anode MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 1.2 Features Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2 level 4 (ESD) Low diode capacitance: C 280 pF IEC 61643-321 d Rated peak pulse power: P =40W AEC-Q101 qualified PPM Ultra low leakage current: I =5nA RM 1.3 Applications Computers and peripherals Automotive electronic control units Audio and video equipment Portable electronics Cellular handsets and accessoriesMMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V MMBZ6V8AL - - 4.5 V MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.5 V MMBZ15VAL - - 12 V MMBZ18VAL - - 14.5 V MMBZ20VAL - - 17 V MMBZ27VAL - - 22 V MMBZ33VAL - - 26 V C diode capacitance f = 1 MHz V =0V d R MMBZ5V6AL - 210 280 pF MMBZ6V2AL - 175 230 pF MMBZ6V8AL - 150 200 pF MMBZ9V1AL - 155 200 pF MMBZ10VAL - 130 170 pF MMBZ12VAL - 110 140 pF MMBZ15VAL - 85 105 pF MMBZ18VAL - 70 90 pF MMBZ20VAL - 65 80 pF MMBZ27VAL - 48 60 pF MMBZ33VAL - 45 55 pF 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 cathode (diode 1) 3 3 2 cathode (diode 2) 3 common anode 12 12 006aaa154 MMBZXAL SER 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 10 December 2009 2 of 17

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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