NX138BKWX Nexperia

NX138BKW 60 V, N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 210 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 200 mA T = 25 C - 2.1 3.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm .Nexperia NX138BKW 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 S SC-70 (SOT323) 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX138BKW SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 NX138BKW B8% 1 % = placeholder for manufacturing site code NX138BKW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 June 2016 2 / 15