NVMFD5C650NL MOSFET Power, Dual N-Channel 60 V, 4.2 m , 111 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFD5C650NLWF Wettable Flank Option for Enhanced Optical 4.2 m 10 V Inspection 60 V 111 A AECQ101 Qualified and PPAP Capable 5.8 m 4.5 V These Devices are PbFree and are RoHS Compliant Dual NChannel MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1 D2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS G1 G2 Continuous Drain T = 25C I 111 A C D Current R JC T = 100C 88 (Notes 1, 2, 3) C Steady S1 S2 State Power Dissipation T = 25C P 125 W D C R (Notes 1, 2) JC T = 100C 62 C MARKING Continuous Drain T = 25C I 21 A A D Current R JA DIAGRAM T = 100C 15 (Notes 1, 2, 3) A Steady D1 D1 State Power Dissipation T = 25C P 3.5 W A D S1 D1 1 R (Notes 1 & 2) JA G1 D1 XXXXXX T = 100C 1.8 A DFN8 5x6 S2 AYWZZ D2 (SO8FL) Pulsed Drain Current T = 25C, t = 10 s I 502 A A p DM G2 D2 CASE 506BT Operating Junction and Storage Temperature T , T 55 to C D2 D2 J stg + 175 A = Assembly Location Source Current (Body Diode) I 91 A S Y = Year Single Pulse DraintoSource Avalanche E 186 mJ W = Work Week AS Energy (T = 25C, I = 6 A) ZZ = Lot Traceability J L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 1.37 JC JunctiontoAmbient Steady State (Note 2) R 46.9 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. P3 NVMFD5C650NL/DNVMFD5C650NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 27.1 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 60 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 98 A 1.2 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 3.5 4.2 DS(on) GS D m V = 4.5 V I = 20 A 4.6 5.8 GS D Forward Transconductance g V = 15 V, I = 50 A 120 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2546 ISS Output Capacitance C 1258 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 17 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 50 A 16 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 50 A 37 G(TOT) GS DS D Threshold Gate Charge Q 4.3 nC G(TH) GatetoSource Charge Q 8.3 GS V = 4.5 V, V = 48 V I = 50 A GS DS D GatetoDrain Charge Q 3.1 GD Plateau Voltage V 3.3 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 13 d(ON) Rise Time t 24 r V = 4.5 V, V = 48 V, GS DS ns I = 5 A, R = 1.0 D G TurnOff Delay Time t 37 d(OFF) Fall Time t 13 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 20 A S T = 125C 0.8 J Reverse Recovery Time t 44 RR Charge Time t 22 ns a V = 0 V, dIS/dt = 50 A/ s, GS I = 50 A S Discharge Time t 22 b Reverse Recovery Charge Q 35 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2